Document
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3A to NNCD12A
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (400 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV. Type NNCD2.0A to NNCD12A Series is into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.
φ 0.4
25 MIN.
Cathode indication
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 kV. • Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up). • DHD (Double Heatsink Diode) construction.
φ 2.0 MAX.
APPLICATIONS
• Circuit E.S.D protection. • Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P PRSM Tj Tstg 400 mW 100 W (tT = 10 µs 1 pulse) 175 °C –65 °C to +175 °C Fig. 7
Document No. D11769EJ2V0DS00 (2nd edition) Date Published December 1996 N Printed in Japan
25 MIN.
2.4 MAX.
©
1996
NNCD3.3A to NNCD12A
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Dynamic ImpedanceNote 2 Zz (Ω) MAX. 120 120 120 120 120 100 70 40 30 25 20 20 20 20 25 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
Breakdown VoltageNote 1 VBR (V) Type Number MIN. NNCD3.3A NNCD3.6A NNCD3.9A NNCD4.3A NNCD4.7A NNCD5.1A NNCD5.6A NNCD6.2A NNCD6.8A NNCD7.5A NNCD8.2A NNCD9.1A NNCD10A NNCD11A NNCD12A 3.16 3.47 3.77 4.05 4.47 4.85 5.29 5.81 6.32 6.88 7.56 8.33 9.19 10.18 11.13 MAX. 3.53 3.83 4.14 4.53 4.91 5.35 5.88 6.40 6.97 7.64 8.41 9.29 10.3 11.26 12.30 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
Reverse Leakage IR (µA)
Capacitance Ct (pF) TEST CONDITION
E.S.D Voltage (kV) TEST CONDITION
MAX. 20 10 5 5 5 5 5 5 2 0.5 0.5 0.5 0.2 0.2 0.2
VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0
TYP. 220 210 200 180 170 160 140 120 110 90 90 90 80 70 70
MIN. 30 30 30 30 30 30
C = 150 pF R = 330 Ω (IEC1000 -4-2)
VR = 0 V f = 1 MHz
30 30 30 30 30 30 30 30 30
Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT give a small A.C. signal.
2
NNCD3.3A to NNCD12A
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
600 Rth - Thermal Resistance - °C/W P - Power Dissipation - mW 500 400 = 10 mm 300 200 100 P.C Board φ 3 mm = 3 mm t = 0.035 0 0 20 40 60 80 100 120 140 160 180 200 TA - Ambient Temperature - °C = 5 mm = 10 mm = 5 mm = 3 mm 600 500 400 300 200 100 0 S = 10 mm = 5 mm = 3 mm
Fig. 2 THERMAL RESISTANCE vs. SIZE OF P.C BOARD
Junction to anbient
P.C Board 7 mm t = 0.035 mm
0
20
40
60
80
100
S - Size of P.C Board - mm2
Fig. 3 IT - VBR CHARACTERISTICS
Fig. 4 IT - VBR CHARACTERISTICS
NNCD7.5A NNCD6.8A 100 m NNCD3.3A 10 m NNCD3.6A NNCD3.9A NNCD4.3A 1m NNCD4.7A 100 µ 10 µ 1µ NNCD5.1A NNCD5.6A 10 n NNCD6.2A
NNCD8.2A NNCD9.1A 100 m NNCD10A 10 m NNCD11A NNCD12A
IT - On State Current - A
IT - On State Current - A
1m 100 µ 10 µ 1µ
100 n
100 n
10 n
1n 0 1 2 3 4 5 6 7 8 9 10 VBR - Breakdown Voltage - V
1n 0 7 8 9 10 11 12 13 14 15 VBR - Breakdown Voltage - V
3
NNCD3.3A to NNCD12A
Fig. 5 Zz - IT CHARACTERISTICS
1 000 TA = 25 °C TYP. NNCD3.3A NNCD3.9A NNCD4.7A 10
ZZ - Dynamic Impedance - Ω
100
6A 5. CD NN
NN CD 5A 7.
NN
CD
10
1 0.01
A
100
0.1
1
10
IT - On State Current - mA
Fig. 6 TRANSIENT THERMAL IMPEDANCE
5 000
Zth - Transient Thermal Impedance - °C/W
1 000 375 °C/W
NNCD [ ] A 100
10 5 1m 10 m 100 m 1 t - Time - s 10 100
Fig. 7 SURGE REVERSE POWER RATING
1 000 TA = 25 °C Non-repetitive
PRSM
PRSM - Surge Reverse Power - W
tT 100
NNCD [ ] A 10
1 1µ
10 µ
100 µ
1m
10 m
100 m
tT - Pulse Width - s
4
NNCD3.3A to NNCD12A
REFERENCE
Document Name NEC semiconductor device reliability/quality control system NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor device Semiconductor device mounting technology manual Guide to quality assurance for semiconductor device Document No. C11745E MEI-1201 C11531E C10535E MEI-1202
5
NNCD3.3A to NNCD12A
[MEMO]
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NNCD3.3A to NNCD12A
[MEMO]
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NNCD3.3A to NNCD12A
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation ha.