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NNCD3.6A Dataheets PDF



Part Number NNCD3.6A
Manufacturers NEC
Logo NEC
Description ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE
Datasheet NNCD3.6A DatasheetNNCD3.6A Datasheet (PDF)

DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3A to NNCD12A ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (400 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV. Type NNCD2.0A to NNCD12A Series is into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation.

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DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3A to NNCD12A ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (400 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV. Type NNCD2.0A to NNCD12A Series is into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW. φ 0.4 25 MIN. Cathode indication PACKAGE DIMENSIONS (in millimeters) FEATURES • Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 kV. • Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up). • DHD (Double Heatsink Diode) construction. φ 2.0 MAX. APPLICATIONS • Circuit E.S.D protection. • Circuits for Waveform clipper, Surge absorber. MAXIMUM RATINGS (TA = 25 °C) Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P PRSM Tj Tstg 400 mW 100 W (tT = 10 µs 1 pulse) 175 °C –65 °C to +175 °C Fig. 7 Document No. D11769EJ2V0DS00 (2nd edition) Date Published December 1996 N Printed in Japan 25 MIN. 2.4 MAX. © 1996 NNCD3.3A to NNCD12A ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) Dynamic ImpedanceNote 2 Zz (Ω) MAX. 120 120 120 120 120 100 70 40 30 25 20 20 20 20 25 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Breakdown VoltageNote 1 VBR (V) Type Number MIN. NNCD3.3A NNCD3.6A NNCD3.9A NNCD4.3A NNCD4.7A NNCD5.1A NNCD5.6A NNCD6.2A NNCD6.8A NNCD7.5A NNCD8.2A NNCD9.1A NNCD10A NNCD11A NNCD12A 3.16 3.47 3.77 4.05 4.47 4.85 5.29 5.81 6.32 6.88 7.56 8.33 9.19 10.18 11.13 MAX. 3.53 3.83 4.14 4.53 4.91 5.35 5.88 6.40 6.97 7.64 8.41 9.29 10.3 11.26 12.30 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Reverse Leakage IR (µA) Capacitance Ct (pF) TEST CONDITION E.S.D Voltage (kV) TEST CONDITION MAX. 20 10 5 5 5 5 5 5 2 0.5 0.5 0.5 0.2 0.2 0.2 VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 TYP. 220 210 200 180 170 160 140 120 110 90 90 90 80 70 70 MIN. 30 30 30 30 30 30 C = 150 pF R = 330 Ω (IEC1000 -4-2) VR = 0 V f = 1 MHz 30 30 30 30 30 30 30 30 30 Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT give a small A.C. signal. 2 NNCD3.3A to NNCD12A TYPICAL CHARACTERISTICS (TA = 25 °C) Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE 600 Rth - Thermal Resistance - °C/W P - Power Dissipation - mW 500 400 = 10 mm 300 200 100 P.C Board φ 3 mm = 3 mm t = 0.035 0 0 20 40 60 80 100 120 140 160 180 200 TA - Ambient Temperature - °C = 5 mm = 10 mm = 5 mm = 3 mm 600 500 400 300 200 100 0 S = 10 mm = 5 mm = 3 mm Fig. 2 THERMAL RESISTANCE vs. SIZE OF P.C BOARD Junction to anbient P.C Board 7 mm t = 0.035 mm 0 20 40 60 80 100 S - Size of P.C Board - mm2 Fig. 3 IT - VBR CHARACTERISTICS Fig. 4 IT - VBR CHARACTERISTICS NNCD7.5A NNCD6.8A 100 m NNCD3.3A 10 m NNCD3.6A NNCD3.9A NNCD4.3A 1m NNCD4.7A 100 µ 10 µ 1µ NNCD5.1A NNCD5.6A 10 n NNCD6.2A NNCD8.2A NNCD9.1A 100 m NNCD10A 10 m NNCD11A NNCD12A IT - On State Current - A IT - On State Current - A 1m 100 µ 10 µ 1µ 100 n 100 n 10 n 1n 0 1 2 3 4 5 6 7 8 9 10 VBR - Breakdown Voltage - V 1n 0 7 8 9 10 11 12 13 14 15 VBR - Breakdown Voltage - V 3 NNCD3.3A to NNCD12A Fig. 5 Zz - IT CHARACTERISTICS 1 000 TA = 25 °C TYP. NNCD3.3A NNCD3.9A NNCD4.7A 10 ZZ - Dynamic Impedance - Ω 100 6A 5. CD NN NN CD 5A 7. NN CD 10 1 0.01 A 100 0.1 1 10 IT - On State Current - mA Fig. 6 TRANSIENT THERMAL IMPEDANCE 5 000 Zth - Transient Thermal Impedance - °C/W 1 000 375 °C/W NNCD [ ] A 100 10 5 1m 10 m 100 m 1 t - Time - s 10 100 Fig. 7 SURGE REVERSE POWER RATING 1 000 TA = 25 °C Non-repetitive PRSM PRSM - Surge Reverse Power - W tT 100 NNCD [ ] A 10 1 1µ 10 µ 100 µ 1m 10 m 100 m tT - Pulse Width - s 4 NNCD3.3A to NNCD12A REFERENCE Document Name NEC semiconductor device reliability/quality control system NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor device Semiconductor device mounting technology manual Guide to quality assurance for semiconductor device Document No. C11745E MEI-1201 C11531E C10535E MEI-1202 5 NNCD3.3A to NNCD12A [MEMO] 6 NNCD3.3A to NNCD12A [MEMO] 7 NNCD3.3A to NNCD12A [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation ha.


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