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NNCD4.7G Dataheets PDF



Part Number NNCD4.7G
Manufacturers NEC
Logo NEC
Description ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE : COMMON ANODE 5 PIN MINI MOLD
Datasheet NNCD4.7G DatasheetNNCD4.7G Datasheet (PDF)

DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3G to NNCD7.5G, NNCD27G ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (QUARTO TYPE : COMMON ANODE) 5 PIN MINI MOLD This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 KV, thus making itself most suitable for external interface circuit protection. With four elements mounted in the 5 PIN Min.

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DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3G to NNCD7.5G, NNCD27G ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (QUARTO TYPE : COMMON ANODE) 5 PIN MINI MOLD This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 KV, thus making itself most suitable for external interface circuit protection. With four elements mounted in the 5 PIN Mini Mold Package, the product can cope with high density and automatic packaging. PACKAGE DIMENSIONS (in millimeters) 2.8 ± 0.2 0.32 +0.1 –0.06 1.5 0.65 +0.1 –0.15 1.9 FEATURES • Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 KV. • Based on the reference supply of the set, the product achieves a series over a wide range (11 product name lined up). • With 4 elements mounted (common anode) mounted in the 5 PIN automatic packaging. MINI MOLD package, the product can achieve a high density and 2.9 ± 0.2 0.95 1 5 0.95 2 3 4 1.1 to 1.4 • External interface circuit E.S.D protection. • Circuits for Waveform clipper, Surge absorber. (5 PIN mini MOLD) MAXIMUM RATINGS (TA = 25 ˚C) Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P PRSM Tj Tstg 200 mW 85 W (t = 10 µs 1 pulse) 150 ˚C –55 ˚C to +150 ˚C (Total) Fig. 5 5 (SC-74A) PIN CONNECTION 4 1 2 3 4 5 1 2 3 : : : : : K1 A K2 K3 K4 Cathode 1 Anode (common) Cathode 2 Cathode 3 Cathode 4 Document No. D11645EJ1V1DS00 (1st edition) Date Published February 1998 N CP(K) Printed in Japan 0 to 0.1 APPLICATIONS 0.8 © 0.16 +0.1 –0.06 1995 1996 NNCD3.3G to NNCD7.5G, NNCD27G ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) (A-K1, A-K2, A-K3, A-K4) Dynamic** Impedance Z z (Ω) MAX. 130 130 130 130 130 130 80 50 30 30 70 IT (mA) 5 5 5 5 5 5 5 5 5 5 2 Reverse Leakage IR (µA) MAX. 20 10 10 10 10 5 5 2 2 2 2 VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 21 Parameter Breakdown Voltage* VBR (V) Capacitance Ct (pF) Test Condition E.S.D Voltage (KV) Test Condition MIN. NNCD3.3G NNCD3.6G NNCD3.9G NNCD4.3G NNCD4.7G NNCD5.1G NNCD5.6G NNCD6.2G NNCD6.8G NNCD7.5G NNCD27G 3.10 3.40 3.70 4.01 4.42 4.84 5.31 5.86 6.47 7.06 25.10 MAX. 3.50 3.80 4.10 4.48 4.90 5.37 5.92 6.53 7.14 7.84 28.90 IT (mA) 5 5 5 5 5 5 5 5 5 5 2 TYP. 220 210 200 180 170 160 140 120 110 90 25 MIN. 30 30 30 30 30 C = 150 pF R = 330 Ω (IEC1000 -4-2) VR = 0 V f = 1 MHz 30 30 30 30 30 30 * ** Tested with pulse (40 ms) Zz is measured at IT give a small A.C. signal. 2 NNCD3.3G to NNCD7.5G, NNCD27G TYPICAL CHARACTERISTICS (TA = 25 ˚C) Fig. 1 P - TA RATING 250 NNCD6.8G 100 m P - Power Dissipation - mW Fig. 2 It - VBR CHARACTERISTICS (A-K1, A-K2, A-K3, A-K4) NNCD7.5G 200 10 m 150 IT - On state Current - A NNCD3.3G NNCD3.6G 1m NNCD3.9G 100 µ 10 µ 1µ 100 n NNCD4.3G 10 n NNCD4.7G NNCD6.2G NNCD5.1G NNCD5.6G 1 2 3 4 5 6 7 8 9 10 100 50 0 25 50 75 100 125 150 TA - Ambient Temperature - ˚C 1n 0 VBR - Breakdown Voltage - V Fig. 3 ZT - IT CHARACTERISTICS 1 000 TYP. NNCD3.9G 100 NNCD5.6G Zz - Ω NNCD4.7G NNCD5.1G 10 NNCD7.5G 1 0.1 1 10 100 IT - On state Current - A 3 NNCD3.3G to NNCD7.5G, NNCD27G Fig. 4 TRANSIENT THERMAL IMPEDANCE 1 000 625 ˚C/W Zth - Transient Thermal Impedance - (˚C/W) 100 NNCD [ ] G 10 1 0.1 1m 10 m 100 m 1 t - Time - Sec 10 100 Fig. 5 SURGE REVERSE POWER RATING 10 000 TA = 25 ˚C Non-Repetive PRSM PRSM - Surge Reverse Power - W tT 1 000 100 NNCD [ ] G 10 1 1µ 10 µ 100 µ 1m 10 m 100 m tT - Pulse Width - Sec 4 NNCD3.3G to NNCD7.5G, NNCD27G Sample Application Circuits * Set Conecter Micro com. PC (CD ROM) Di Palallel Interface Di Imterface Cable * Set Printer, P.D.C, T.V Game etc 5 NNCD3.3G to NNCD7.5G, NNCD27G REFERENCE Document Name NEC semiconductor device reliability/quality control system NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor device Document No. C11745E MEI-1201 C11531E C10535E MEI-1202 6 NNCD3.3G to NNCD7.5G, NNCD27G [MEMO] 7 NNCD3.3G to NNCD7.5G, NNCD27G [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, th.


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