Document
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3F to NNCD12F
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (DOUBLE TYPE, ANODE COMMON) 3PIN MINI MOLD
This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endur-
PACKAGE DIMENSIONS
(in millimeters)
0.4 –0.05
2.8 ± 0.2 1.5 0.65 –0.15
+0.1
external interface circuit protection. Type NNCD3.3F to NNCD12F Series include two elements in
0.95 0.95 2.9 ± 0.2
3PIN Mini Mold Package having allowable power dissipation of 200 mW.
+0.1
ance of no less than 30 kV, thus making itself most suitable for
2 1 3
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 kV. • Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up).
1.1 to 1.4 0.3
Marking
0.16 –0.06
+0.1
APPLICATIONS
• External interface circuit E.S.D protection. • Circuits for Waveform clipper, Surge absorber.
PIN CONNECTION SC-59 (EIAJ) 1. K1: Cathode 1 2. K2: Cathode 2 3. A : Anode (common) K2 2
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P PRSM Tj Tstg 200 mW 100 W (tT = 10 µs 1 pulse) 150 °C –55 °C to +150 °C (Total) Fig. 6
0 to 0.1
0.4 –0.05
+0.1
A 3
K1 1
Document No. D11774EJ2V0DS00 (2nd edition) Date Published December 1996 N Printed in Japan
©
1996
NNCD3.3F to NNCD12F
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) (A-K1, A-K2)
Dynamic ImpedanceNote 2 Zz (Ω) MAX. 130 130 130 130 130 130 80 50 30 30 30 30 30 30 35 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
Breakdown VoltageNote 1 VBR (V) Type Number MIN. NNCD3.3F NNCD3.6F NNCD3.9F NNCD4.3F NNCD4.7F NNCD5.1F NNCD5.6F NNCD6.2F NNCD6.8F NNCD7.5F NNCD8.2F NNCD9.1F NNCD10F NNCD11F NNCD12F 3.10 3.40 3.70 4.01 4.42 4.84 5.31 5.86 6.47 7.06 7.76 8.56 9.45 10.44 11.42 MAX. 3.50 3.80 4.10 4.48 4.90 5.37 5.92 6.53 7.14 7.84 8.64 9.55 10.55 11.56 12.60 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
Reverse Leakage IR (µA)
Capacitance Ct (pF) TEST CONDITION
E.S.D Voltage (kV) TEST CONDITION
MAX. 20 10 10 10 10 5 5 2 2 2 2 2 2 2 2
VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0
TYP. 220 210 200 180 170 160 140 120 110 90 90 90 80 70 70
MIN. 30 30 30 30 30 30
C = 150 pF R = 330 Ω (IEC1000 -4-2)
VR = 0 V f = 1 MHz
30 30 30 30 30 30 30 30 30
Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT give a small A.C. signal.
2
NNCD3.3F to NNCD12F
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
P - Power Dissipation - mW
200
150
100
50
0
0
25
50
75
100
125
150
TA - Ambient Temperature - °C
Fig. 2 IT - VBR CHARACTERISTICS
NNCD7.5F NNCD8.2F NNCD6.8F NNCD9.1F
Fig. 3 IT - VBR CHARACTERISTICS
100 m NNCD3.3F NNCD3.3F 10 m NNCD3.9F NNCD4.3F IT - On State Current - A 1m NNCD4.7F 100 µ 10 µ 1µ 100 n 10 n 1n NNCD5.1F
100 m NNCD10F 10 m IT - On State Current - A 1m 100 µ 10 µ 1µ 100 n 10 n 1n
NNCD11F NNCD12F
NNCD5.6F NNCD6.2F
0
1
2
3
4
5
6
7
8
9 10
0
7
8
9 10 11 12 13 14 15
VBR - Breakdown Voltage - V
VBR - Breakdown Voltage - V
3
NNCD3.3F to NNCD12F
Fig. 4 ZZ - IT CHARACTERISTICS
1 000 TYP.
ZZ - Dynamic Impedance - Ω
100
NNCD5.6F
NNCD3.9F NNCD4.7F NNCD5.1F
NNCD10F 10 NNCD7.5F
1 0.1
1
10
100
IT - On State Current - mA
Fig. 5 TRANSIENT THERMAL IMPEDANCE
5 000
Zth - Transient Thermal Impedance - °C/W
1 000
625 °C/W
100
NNCD [ ] F
10 5 1m 10 m 100 m 1 t - Time - s 10 100
Fig. 6 SURGE REVERSE POWER RATING
1 000 TA = 25 °C Non-repetitive PRSM
PRSM - Surge Reverse Power - W
tT 100
NNCD [ ] F 10
1 1µ
10 µ
100 µ
1m
10 m
100 m
tT - Pulse Width - s
4
NNCD3.3F to NNCD12F
Sample Application Circuits
SetNote Conecter
Micro com. PC (CD ROM) Di
Palallel Interface
Di Interface Cable Note Set Printer, P.D.C, T.V Game etc.
5
NNCD3.3F to NNCD12F
REFERENCE
Document Name NEC semiconductor device reliability/quality control system NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor device Semiconductor device mounting technology manual Guide to quality assurance for semiconductor device Document No. C11745E MEI-1201 C11531E C10535E MEI-1202
6
NNCD3.3F to NNCD12F
[MEMO]
7
NNCD3.3F to NNCD12F
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC C.