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NNCD8.2F Dataheets PDF



Part Number NNCD8.2F
Manufacturers NEC
Logo NEC
Description ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE / ANODE COMMON 3PIN MINI MOLD
Datasheet NNCD8.2F DatasheetNNCD8.2F Datasheet (PDF)

DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3F to NNCD12F ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (DOUBLE TYPE, ANODE COMMON) 3PIN MINI MOLD This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endur- PACKAGE DIMENSIONS (in millimeters) 0.4 –0.05 2.8 ± 0.2 1.5 0.65 –0.15 +0.1 external interface circuit protection. Type NNCD3.3F to NNCD12F Series include.

  NNCD8.2F   NNCD8.2F


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DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3F to NNCD12F ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (DOUBLE TYPE, ANODE COMMON) 3PIN MINI MOLD This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endur- PACKAGE DIMENSIONS (in millimeters) 0.4 –0.05 2.8 ± 0.2 1.5 0.65 –0.15 +0.1 external interface circuit protection. Type NNCD3.3F to NNCD12F Series include two elements in 0.95 0.95 2.9 ± 0.2 3PIN Mini Mold Package having allowable power dissipation of 200 mW. +0.1 ance of no less than 30 kV, thus making itself most suitable for 2 1 3 FEATURES • Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 kV. • Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up). 1.1 to 1.4 0.3 Marking 0.16 –0.06 +0.1 APPLICATIONS • External interface circuit E.S.D protection. • Circuits for Waveform clipper, Surge absorber. PIN CONNECTION SC-59 (EIAJ) 1. K1: Cathode 1 2. K2: Cathode 2 3. A : Anode (common) K2 2 MAXIMUM RATINGS (TA = 25 °C) Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P PRSM Tj Tstg 200 mW 100 W (tT = 10 µs 1 pulse) 150 °C –55 °C to +150 °C (Total) Fig. 6 0 to 0.1 0.4 –0.05 +0.1 A 3 K1 1 Document No. D11774EJ2V0DS00 (2nd edition) Date Published December 1996 N Printed in Japan © 1996 NNCD3.3F to NNCD12F ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) (A-K1, A-K2) Dynamic ImpedanceNote 2 Zz (Ω) MAX. 130 130 130 130 130 130 80 50 30 30 30 30 30 30 35 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Breakdown VoltageNote 1 VBR (V) Type Number MIN. NNCD3.3F NNCD3.6F NNCD3.9F NNCD4.3F NNCD4.7F NNCD5.1F NNCD5.6F NNCD6.2F NNCD6.8F NNCD7.5F NNCD8.2F NNCD9.1F NNCD10F NNCD11F NNCD12F 3.10 3.40 3.70 4.01 4.42 4.84 5.31 5.86 6.47 7.06 7.76 8.56 9.45 10.44 11.42 MAX. 3.50 3.80 4.10 4.48 4.90 5.37 5.92 6.53 7.14 7.84 8.64 9.55 10.55 11.56 12.60 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Reverse Leakage IR (µA) Capacitance Ct (pF) TEST CONDITION E.S.D Voltage (kV) TEST CONDITION MAX. 20 10 10 10 10 5 5 2 2 2 2 2 2 2 2 VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 TYP. 220 210 200 180 170 160 140 120 110 90 90 90 80 70 70 MIN. 30 30 30 30 30 30 C = 150 pF R = 330 Ω (IEC1000 -4-2) VR = 0 V f = 1 MHz 30 30 30 30 30 30 30 30 30 Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT give a small A.C. signal. 2 NNCD3.3F to NNCD12F TYPICAL CHARACTERISTICS (TA = 25 °C) Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 P - Power Dissipation - mW 200 150 100 50 0 0 25 50 75 100 125 150 TA - Ambient Temperature - °C Fig. 2 IT - VBR CHARACTERISTICS NNCD7.5F NNCD8.2F NNCD6.8F NNCD9.1F Fig. 3 IT - VBR CHARACTERISTICS 100 m NNCD3.3F NNCD3.3F 10 m NNCD3.9F NNCD4.3F IT - On State Current - A 1m NNCD4.7F 100 µ 10 µ 1µ 100 n 10 n 1n NNCD5.1F 100 m NNCD10F 10 m IT - On State Current - A 1m 100 µ 10 µ 1µ 100 n 10 n 1n NNCD11F NNCD12F NNCD5.6F NNCD6.2F 0 1 2 3 4 5 6 7 8 9 10 0 7 8 9 10 11 12 13 14 15 VBR - Breakdown Voltage - V VBR - Breakdown Voltage - V 3 NNCD3.3F to NNCD12F Fig. 4 ZZ - IT CHARACTERISTICS 1 000 TYP. ZZ - Dynamic Impedance - Ω 100 NNCD5.6F NNCD3.9F NNCD4.7F NNCD5.1F NNCD10F 10 NNCD7.5F 1 0.1 1 10 100 IT - On State Current - mA Fig. 5 TRANSIENT THERMAL IMPEDANCE 5 000 Zth - Transient Thermal Impedance - °C/W 1 000 625 °C/W 100 NNCD [ ] F 10 5 1m 10 m 100 m 1 t - Time - s 10 100 Fig. 6 SURGE REVERSE POWER RATING 1 000 TA = 25 °C Non-repetitive PRSM PRSM - Surge Reverse Power - W tT 100 NNCD [ ] F 10 1 1µ 10 µ 100 µ 1m 10 m 100 m tT - Pulse Width - s 4 NNCD3.3F to NNCD12F Sample Application Circuits SetNote Conecter Micro com. PC (CD ROM) Di Palallel Interface Di Interface Cable Note Set Printer, P.D.C, T.V Game etc. 5 NNCD3.3F to NNCD12F REFERENCE Document Name NEC semiconductor device reliability/quality control system NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor device Semiconductor device mounting technology manual Guide to quality assurance for semiconductor device Document No. C11745E MEI-1201 C11531E C10535E MEI-1202 6 NNCD3.3F to NNCD12F [MEMO] 7 NNCD3.3F to NNCD12F [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC C.


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