NTB125N02R

NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features Planar HD3e Process for Fast Switching Performance Body Diode for Low trr and Qrr and Optimized for Synchronous Operation Low Ciss to Minimize Driver Loss Optimized Qgd and RDS(on) for Shoot−through Protection Low Gate Charge Pb−Free Packages are Available MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current − Continuous @ TC = 25°C, Chip Continuous @ TC = 25°C, Limited by Package Continuous @ TA = 25°C, Limited by Wires Single Pulse (tp = 10 ms) Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk, L = 1 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds VDSS VGS RqJC PD ID ID ID ID 24 ±20 1.1 113.6 Vdc Vdc °C/W W 125 A 120.5 A 95 A 250 A RqJA PD ID 46 °C/W 2.72 W 18.6 A RqJA PD ID TJ, Tstg EAS 63 °C/W 1.98 W 15.9 A −55 to °C 150 120 mJ TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Ma...