NTD85N02R

NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com VDSS 24 V RDS(ON) TYP 4.8 mW ID MAX 85 A Pb−Free Packages are Available Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge N−Channel D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Limited by Package Continuous @ TA = 25°C, Limited by Wires Single Pulse (tp ≤ 10 ms) Thermal Resistance, Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, IL = 13 Apk, L = 1 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds Symbol VDSS VGS RqJC PD ID ID IDM RqJA PD ID RqJA PD ID TJ, Tstg EAS Value 24 ±20 1.6 78.1 85 32 96 52 2.4 16 100 1.25 12 −55 to 150 85 Unit Vdc Vdc °C/W W A A A °C/W 1 2 W A °C/W W A °C mJ 1 TL 260 °C 3 2 1 Gate 2 Drain 3 Source 4 Drain 3 DPAK CASE 369C STYLE2 S G 4 4 1 2 3 DPAK−3 CASE 369D STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENTS 4 YWW 85 N02 YWW ...