NTE112

NTE112 Silicon Small Signal Schottky Diode Description: The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Forward Continuous Current (TA = +25°C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Surge Non–Repetitive Forward Current (tp ≤ 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150° Thermal Resistance, Junction–to–Ambient (Note 1), Rth (j–a) . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W Maximum Lead Temperature (During soldering, 4mm from case, 10s max), TL . . . . . . . . . . +230°C Note 1. On infinite heatsink with 4mm lead length. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Static Characteristics Breakdown Voltage Forward Voltage Drop Reverse Current Dynamic Characteristics Capacitance Stored Charge Frequency C QS F VR = 0V, f = 1MHz IF = 10mA, Note 3 f = 1GHz, Note 4 – – – – – 6 1 3 7 pF pC dB V(BR) VF IR IR = 100µA IF = 10mA, Note 2 VR = 1V, Note 2 5 –...