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NTE128 Dataheets PDF



Part Number NTE128
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE128 DatasheetNTE128 Datasheet (PDF)

NTE128 (NPN) & NTE129 (PNP) Silicon Complementary Transistors Audio Output, Video, Driver Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . ..

  NTE128   NTE128


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NTE128 (NPN) & NTE129 (PNP) Silicon Complementary Transistors Audio Output, Video, Driver Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCBO NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TA = +25°C), PD NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6mW/°C NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.15mW/°C Total Device Dissipation (TC = +25°C), PD NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.5°C/W NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W Thermal Resistance, Junction–to–Ambient, RthJA NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89.5°C/W NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140°C/W Lead Temperature (During Soldering, 1/16” from case, 60sec max), TL . . . . . . . . . . . . . . . . . +300°C Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and NTE129 (PNP). Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Collector–Emitter Breakdown Voltage NTE128 NTE129 Collector–Base Breakdown Voltage NTE128 NTE129 Emitter–Base Breakdown Voltage NTE128 NTE129 Collector Cutoff Current NTE128 ICBO V(BR)EBO V(BR)CBO V(BR)CEO IC = 30mA, IB = 0 IC = 10mA IC = 100µA, IE = 0 IC = 10µA IE = 100µA, IC = 0 IE = 10µA VCB = 90V, IE = 0 VCB = 90V, IE = 0, TA = +150°C NTE129 VCB = 60V VCB = 60V, TA = +150°C Emitter Cutoff Current NTE128 NTE129 ON Characteristics (Note 2) DC Current Gain NTE128 hFE IC = 0.1mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 150mA, VCE = 10V, TC = –55°C IC = 500mA, VCE = 10V IC = 1.0A, VCE = 10V NTE129 IC = 100µA, VCE = 5V IC = 100mA, VCE = 5V IC = 100mA, VCE = 5V, TC = –55°C IC = 500mA, VCE = 5V IC = 1.0A, VCE = 5V Collector–Emitter Saturation Voltage NTE128 VCE(sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA NTE129 IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base–Emitter Saturation Voltage NTE128 NTE129 Base–Emitter ON Voltage (NTE129 Only) VBE(on) IC = 500mA, VCE = 500mV VBE(sat) IC = 150mA, IB = 15mA 50 90 100 40 50 15 75 100 40 70 25 – – – – – – – – – – – – – – – – – – – – – – – – – – – 300 – – – – 300 – – – 0.2 0.5 0.15 0.5 1.1 0.9 1.1 V V V V V V V IEBO VBE = 5V, IC = 0 VBE = 5V 80 .


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