Document
93C06/46
256 Bit/1K 5.0V CMOS Serial EEPROM
FEATURES
• Low power CMOS technology • 16 bit memory organization
- 6 x 16 bit organization (93C06) - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles • Automatic ERASE before WRITE • Power on/off data protection circuitry • 1,000,000 ERASE/WRITE cycles guaranteed • Data Retention > 200 years • 8-pin DIP or SOIC package • Available for extended temperature ranges: - Commercial: 0˚C to +70˚C - Industrial: -40˚C to +85˚C - Automotive: -40˚C to +125˚C • 2 ms program cycle time
DESCRIPTION
The Microchip Technology Inc. 93C06/46 family of Serial Electrically Erasable PROMs are configured in a x16 organization. Advanced CMOS technology makes these devices ideal for low-power non-volatile memory applications. The 93C06/46 is available in the standard 8-pin DIP and surface mount SOIC packages. The 93C46X comes as SOIC only.
These devices offer fast (1 ms) byte write and extended (-40˚C to +125˚C) temperature operation. It is recommended that all other applications use Microchip’s 93LC46.
PACKAGE TYPE
DIP CS 1
8 VCC
CLK 2 93C06 7 NC
93C46
DI 3
6 NC
DO 4
5 VSS
SOIC CS CLK DI DO
18
27 93C06
3 93C46 6
45
VCC NC NC VSS
NC VCC CS CLK
18
27 93C46X
36
45
NC VSS DO DI
BLOCK DIAGRAM
VCC
VSS
MEMORY ARRAY
ADDRESS DECODER
DATA REGISTER
DI MODE
DECODE CS LOGIC
CLOCK CLK
GENERATOR
OUTPUT BUFFER
DO
© 1995 Microchip Technology Inc.
DS11179C-page 1
93C06/46
1.0 ELECTRICAL CHARACTERISTICS
1.1 Maximum Ratings*
VCC ............................................................................ 7.0V All inputs and outputs w.r.t. VSS......... -0.6V to VCC +1.0V Storage temperature................................-65˚C to +150˚C Ambient temperature with power applied . -65˚C to +125C Soldering temperature of leads (10 seconds)........+300˚C ESD protection on all pins ......................................... 4 kV *Notice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
TABLE 1-1: Name CS CLK DI DO VSS NC
VCC
PIN FUNCTION TABLE Function
Chip Select Serial Clock Data In Data Out Ground No Connect; No Internal Connection +5V Power Supply
TABLE 1-2: DC CHARACTERISTICS VCC = +5V (±10%)
Commercial: Industrial: Automotive:
Tamb = 0˚C to +70˚C Tamb = -40˚C to +85˚C Tamb = -40˚C to +125˚C (Note 3)
Parameter
Symbol
Min Max Units
Conditions
VCC detector threshold
VTH
2.8 4.5
V
High level input voltage
VIH 2.0 VCC + 1 V
Low level input voltage
VIL
-0.3 0.8
V
High level output voltage
VOH
2.4 —
V IOH = -400 µA
Low level output voltage
VOL — 0.4 V IOL = 3.2 mA
Input leakage current
ILI — 10 µA VIN = 0V to VCC (Note 1)
Output leakage current
ILO — 10 µA VOUT = 0V to VCC (Note 1)
Pin capacitance (all inputs/outputs)
CIN, COUT
—
7
pF VIN/VOUT = 0V (Note 2)
Tamb = +25˚C, f = 1 MHz
Operating current (all modes)
ICC write
—
4 mA FCLK = 1 MHz, VCC = 5.5V
Standby current
ICCS
— 100 µA CS = 0V, VCC = 5.5V
Note 1: Internal resistor pull-up at Pin 6. Note 2: This parameter is periodically sampled and not 100% tested. Note 3: For operation above 85˚C, endurance is rated at 10,000 ERASE/WRITE cycles.
FIGURE 1-1: SYNCHRONOUS DATA TIMING
TCKH
TCKL
TCSH
CLK TDIS
DI
VALID
CS TCSS
TDIH
TDIS
TDIH
VALID
TCSL
TPD TPD TCZ
HIGH
DO
VALID
VALID
Z
DS11179C-page 2
© 1995 Microchip Technology Inc.
93C06/46
TABLE 1-3: AC CHARACTERISTICS
Parameter
Symbol
Clock frequency Clock high time Clock low time Chip select setup time Chip select hold time Chip select low time Data input setup time Data input hold time Data output delay time Data output disable time (from CS = low) Data output disable time (from last clock) Status valid time Program cycle time (Auto Erase and Write)
FCLK TCKH TCKL TCSS TCSH TCSL TDIS TDIH TPD TCZ TDDZ TSV TWC
Min
500 500 50
0 100 100 100 —
0 0 — —
Erase cycle time
TEC —
Max
1 — — — — — — — 400 100 400 100 2 15 1
Units
MHz ns ns ns ns ns ns ns ns ns ns ns ms ms ms
Conditions
CL = 100 pF CL = 100 pF CL = 100 pF CL = 100 pF For ERAL and WRAL
2.0 PIN DESCRIPTION
2.1 Chip Select (CS)
A HIGH level selects the device. A LOW level deselects the device and forces it into standby mode. However, a programming cycle which is already initiated and/or in progress will be completed, regardless of the CS input signal. If CS is brought LOW during a program cycle, the device will go into standby mode as soon as the programming cycle is completed.
CS must be LOW for 100 ns minimum (TCSL) between consecutive instructions. If CS is LOW, the internal control logic is held in a RESET status.
2.2 Serial Clock (CLK)
The Serial Clock is used to synchronize the communication betw.