NPN Transistor. NTE172A Datasheet

NTE172A Transistor. Datasheet pdf. Equivalent

Part NTE172A
Description Silicon NPN Transistor
Feature NTE172A Silicon NPN Transistor Darlington Preamp, Medium Speed Switch Description: The NTE172A is a .
Manufacture NTE
Datasheet
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NTE172A
NTE172A
Silicon NPN Transistor
Darlington Preamp, Medium Speed Switch
Description:
The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier
input stages requiring input impedances of several megohms or extremely low level, high gain, low
noise amplifier applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max.), TL . . . . . . . . +260°C
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Static Characteristics
Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1µA, IE = 0
40 –
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0
40 –
Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1µA, IE = 0
12 –
DC Current Gain
hFE VCE = 5V, IC = 2mA
7000 – 70000
VCE = 5V, IC = 100mA
20000 –
Collector Cutoff Current
ICBO VCB = 40V, IE = 0
– – 100
VCB = 40V, IE = 0, TA = +100°C – – 20
Unit
V
V
V
nA
µA



NTE172A
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics (Cont’d)
Emitter Cutoff Current
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
BaseEmitter Voltage
Dynamic Characteristics
IEBO
VCE(sat)
VBE(sat)
VBE
VEB = 12V, IC = 0
IC = 200mA, IB = 0.2mA
IC = 200mA, IB = 0.2mA
VCE = 5V, IC = 200mA
– – 100 nA
– – 1.4
V
– – 1.6
V
– – 1.5
V
SmallSignal Current Gain
Current GainHigh Frequency
Current GainBandwidth Product
Input Impedance
CollectorBase Capacitance
Emitter Capacitance
Noise Voltage
hfe VCE = 5V, IC = 2mA, f = 1kHz
7000
|hfe| VCE = 5V, IC = 2mA, f = 1kHz
15.6
dB
fT VCE = 5V, IC = 2mA, f = 10MHz 60 – –
MHz
hie VCE = 5V, IC = 2mA, f = 1kHz
650
k
Ccb VCB = 10V, f = 1MHz
7.6 10.0
pF
Ceb VEB = 0.5V, f = 1MHz
10.5
pF
en IC = 0.6mA, VCE = 5V,
RG = 160k, f = 10Hz to 10kHz,
B.W. = 15.7kHz
195 230 nV/pHz
C
B
E
.210
(5.33)
Max
.500
(12.7)
Min
.135 (3.45) Min
Seating Plane
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
ECB
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max







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