Power Amp. NTE184 Datasheet

NTE184 Amp. Datasheet pdf. Equivalent

Part NTE184
Description Silicon Complementary Transistors Audio Power Amp
Feature NTE184 (NPN) & NTE185 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: T.
Manufacture NTE
Datasheet
Download NTE184 Datasheet



NTE184
NTE184 (NPN) & NTE185 (PNP)
Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic
package designed for use in power amplifier and switching circuits.
Features:
D Excellent Safe Area Limits
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 0.1A, IB = 0, Note 1
80 – – V
Collector Cutoff Current
ICEO
ICEX
ICBO
VCE = 80V, IB = 0
VCE = 80V, VEB(off) = 1.5V
VCE = 80V, VEB(off) = 1.5V, TC = +150°C
VCB = 80V, IE = 0
– 1.0 mA
– 0.1 mA
– 2.0 mA
– 0.1 mA
Emitter Cutoff Current
IEBO VBE = 5V, IC = 0
– – 1.0 mA



NTE184
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
ON Characteristics (Note 1)
DC Current Gain
hFE IC = 1.5A, VCE = 2V
IC = 4A, VCE = 2V
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
VCE(sat)
VBE(on)
IC = 1.5A, IB = 0.15A
IC = 4A, IB = 1A
IC = 1.5A, VCE = 2V
Current GainBandwidth Product
fT IC = 1A, VCE = 10V, f = 1MHz
Min Typ Max Unit
20 80
7––
– – 0.6 V
– – 1.4 V
– – 1.2 V
2.0 – – MHz
Note 1. Pulse test: Pulse Width 300µs, Duty Cycle 2%.
Note 2. NTE184MP is a matched pair of NTE184 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 3. NTE185MCP is a matched complementary pair containing 1 each of NTE184 (NPN) and
NTE185 (PNP).
.450
(11.4)
Max
.330 (8.38)
Max
.175
(4.45)
Max
.655
(16.6)
Max
EC B
.118 (3.0)
Dia
.030 (.762) Dia
.130 (3.3)
Max
.090 (2.28)







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)