Complementary Transistors. NTE186 Datasheet

NTE186 Transistors. Datasheet pdf. Equivalent

Part NTE186
Description Silicon Complementary Transistors
Feature NTE186 (NPN) & NTE187 (PNP) Silicon Complementary Transistors General Purpose Output & Driver for Au.
Manufacture NTE
Datasheet
Download NTE186 Datasheet




NTE186
NTE186 (NPN) & NTE187 (PNP)
Silicon Complementary Transistors
General Purpose Output & Driver for Audio Amplifier
Description:
The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case
designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater
than 1MHz, series, shunt, and switching regulators, low and high frequency inverters/converters, and
many other general purpose applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation, PT
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.1W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case for 10sec max), TL . . . . . . . . . . . . . . . +260°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W



NTE186
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Capacitance
Current GainBandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
hFE
VCE(sat)
VBE(sat)
ICES
IEBO
Ccbo
fT
td
tr
ts
tf
VCE = 1V, IC = 200mA
VCE = 1V, IC = 2A
IC = 1A, IB = 50mA
IC = 1A, IB = 100mA
VCE = 70V, TJ = +25°C
VEB = 5V, TJ = +25°C
VCB = 10V, f = 1MHz
VCE = 4V, IC = 20mA
IC = 1A, IB1 = IB2 = 100mA
Min Typ Max Unit
100 220
20 – –
– – 0.5 V
– – 1.3 V
– – 10 µA
– – 100 µA
– – 100 pF
50 MHz
100 ns
100 ns
500 ns
75 – – ns
.380 (9.56)
C
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.180 (4.57)
.132 (3.35) Dia
.325
(9.52)
.070 (1.78) x 45°
Chamf
.050 (1.27)
.400
(10.16)
Min
B CE
.100 (2.54)
.100 (2.54)







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