Complementary Transistors. NTE188 Datasheet

NTE188 Transistors. Datasheet pdf. Equivalent

Part NTE188
Description Silicon Complementary Transistors
Feature NTE188 (NPN) & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Descri.
Manufacture NTE
Datasheet
Download NTE188 Datasheet




NTE188
NTE188 (NPN) & NTE189 (PNP)
Silicon Complementary Transistors
High Voltage Amplifier & Driver
Description:
The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type
package designed for general purpose, high voltage amplifier and driver applications.
Features:
D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA
D High Power Dissipation: PD = 10W @ TC = +25°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voiltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Note 1. RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0, Note 2
V(BR)EBO IE = 100µA, IC = 0
Collector Cutoff Current
NTE188
ICBO
VCB = 80V, IE = 0
NTE189
VCB = 60V, IE = 0
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Min Typ Max Unit
80 – – V
4––V
– – 100 nA
– – 100 nA



NTE188
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Note 3)
DC Current Gain
NTE188
hFE
IC = 50mA, VCE = 1V
60 110
IC = 250mA, VCE = 1V
30 65
NTE189
IC = 50mA, VCE = 1V
IC = 50mA, VCE = 1V
IC = 50mA, VCE = 1V
33
80 160
50 130
IC = 50mA, VCE = 1V
8
CollectorEmitter Saturation Voltage
NTE188
VCE(sat)
IC = 250mA, IB = 10mA
IC = 250mA, IB = 25mA
0.18 0.4
0.1
V
V
NTE189
IC = 250mA, IB = 10mA
0.22 0.5 V
IC = 250mA, IB = 25mA
0.15
V
BaseEmitter ON Voltage
NTE188
VBE(on)
IC = 250mA, VCE = 5V
0.76 1.2 V
NTE189
0.78 1.2 V
Small–Signal Characteristics
Current GainBandwidth Product
NTE188
NTE189
fT
IC = 250mA, VCE = 5V, f = 100MHz, 50 150 MHz
Note 2
50 100 MHz
Output Capacitance
NTE188
NTE189
Cob
VCB = 10V, IE = 0, f = 100MHz
6 12 pF
10 15 pF
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.160
(4.06)
.380 (9.65) Max
.050 (1.27)
.100 (2.54)
.280 (7.25) Max
.128 (3.28) Dia
.218
(5.55)
.475
(12.0)
Min
EBC
.995
(25.3)
.100 (2.54)
.200 (5.08)
Collector Connected to Tab







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