Complementary Transistors. NTE192 Datasheet

NTE192 Transistors. Datasheet pdf. Equivalent

Part NTE192
Description Silicon Complementary Transistors
Feature NTE192 (NPN) & NTE193 (PNP) NTE192A (NPN) & NTE193A (PNP) Silicon Complementary Transistors Audio Po.
Manufacture NTE
Datasheet
Download NTE192 Datasheet




NTE192
NTE192 (NPN) & NTE193 (PNP)
NTE192A (NPN) & NTE193A (PNP)
Silicon Complementary Transistors
Audio Power Output
Description:
NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary
transistors in a TO92HS type package designed for use in general purpose industrial circuits. These
devices are especially suited for high level linear amplifiers or medium speed switching circuits in
industrial control applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TC = +25°C, Note 1), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2mW/°C
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.47mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max), TL . . . . . . . . +260°C
Note 1. Determined from power limitations due to saturation voltage at this current.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cutoff Current
Emitter Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
VCB = 50V
VCB = 50V, TA = +100°C
VEB = 5V
IB = 3mA, IC = 50mA
IB = 3mA, IC = 50mA
VCE = 4.5V, IC = 2mA
Min Typ Max Unit
– – 0.1 µA
– – 15 µA
– – 0.1 µA
– – 0.30 V
– – 0.85 V
180 – 540



NTE192
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Small–Signal Characteristics
SmallSignal Current Gain
hfe VC = 4.5V, Frequency of
Measurement =1000cps
180 – –
Input Impedance
Output Admittance
Voltage Feedback Ratio
VCE = 10V, IC = 1mA, f = 1kc
hie VCE = 10V, IC = 1mA, f = 1kc
hoe VCE = 10V, IC = 1mA, f = 1kc
hre VCE = 10V, IC = 1mA, f = 1kc
150 300
4200 8300
10 20 µmhos
0.2 0.4 x 103
.350 (8.89)
.325
(8.27)
.500
(12.7)
Min
.263
(6.7)
Max
.187 (4.76)
.156
(3.95)
.125 (3.17) Dia
.017 (0.45) Dia
.100 (2.54)
.050 (1.27)
3
.127 (3.25)
2
1
Pin Number 1 2 3
NTE192/193 C B E
NTE192A/193A B C E







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