Power Amplifier. NTE194 Datasheet

NTE194 Amplifier. Datasheet pdf. Equivalent

Part NTE194
Description Silicon NPN Transistor Audio Power Amplifier
Feature NTE194 Silicon NPN Transistor Audio Power Amplifier Description: The NTE194 is a silicon NPN amplifi.
Manufacture NTE
Datasheet
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NTE194
NTE194
Silicon NPN Transistor
Audio Power Amplifier
Description:
The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W
Note 1 RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collctor–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CEO IC = 1mA, IB = 0, Note 2
V(BR)CBO IC = 100µA, IE = 0
V(BR)EBO IE = 10µA, IC = 0
ICBO VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = +100°C
IEBO VEB = 4V, IC = 0
Min Typ Max Unit
180 –
180 –
6–
––
––
––
–V
–V
–V
50 nA
50 nA
50 nA
Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%.



NTE194
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 5V, IC = 1mA
VCE = 5V, IC = 10mA
VCE = 5V, IC = 50mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
80 – –
80 250
30 – –
– – 0.15 V
– – 0.20 V
– – 1.0 V
– – 1.0 V
Current GainBandwidth Product
Output Capacitance
Input Capacitance
SmallSignal Current Gain
Noise Figure
fT
Cobo
Cibo
hfe
NF
VCE = 10V, IC = 10mA, f = 100MHz
VCB = 10V, IE = 0, f = 1MHz
VBE = 0.5V, IC = 0, f = 1MHz
VCE = 10V, IC = 1mA, f = 1kHz
VCE = 5V, IC = 250µA, RS = 1k,
f = 10Hz to 15.7kHz
100 300 MHz
– – 6 pF
– – 20 pF
50 200
– – 8.0 dB
Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%.
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
EBC
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max







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