Document
NTE195A Silicon NPN Transistor RF Power Amp/Driver, CB
Description: The NTE195A is designed primarily for use in large–signal output amplifier stages. Intended for use in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10dB Efficiency = 70% Typical Absolute Maximum Ratings: Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter OFF Characteristics Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Capacitance Cob VCB = 12.5V, IE = 0, f = 1MHz – 35 70 pF hFE VCE = 2V, IC = 400mA 30 – – – V(BR)CES IC = 200mA, VBE = 0 V(BR)EB
O
Symbol
Test Conditions
Min
Typ
Max Unit
70 4 –
– – –
– – 0.01
V V mA
IE = 1mA, IC = 0 VCB = 15V, IE = 0
ICBO
Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)
Parameter Functional Test Common Emitter Amplifier Power Gain Collector Efficiency Percent Up–Modulation Parallel Equivalent Input Resistance Parallel Equivalent Input Capacitance Parallel Equivalent Output Capaciatnce GPE η – Rin Cin Cout POUT = 3.5W, VCC = 12.5V, f = 27MHz POUT = 3.5W, VCC = 12.5V, f = 27MHz, Note 1 f = 27MHz, Note 2 POUT = 3.5W, VCC = 12.5V, f = 27MHz POUT = 3.5W, VCC = 12.5V, f = 27MHz POUT = 3.5W, VCC = 12.5V, f = 27MHz 10 – – – – – – – dB % % Symbol Test Conditions Min Typ Max Unit
62.5 70.0 – – – – 85 21 900 200
Ω
pF pF
Note 1. η = RF POUT 100 (VCC) (IC) Note 2. Percentage Up–Modulation is measured by setting the Carrier Power (PC) to 3.5 Watts with VCC = 12.5Vdc and noting the power input. The peak envelope power (PEP) is noted after doubling the original power input to simulate driver modulation (at a 25% duty cycle for thermal considerations) and raising the VCC to 25Vdc (to simulate the modulating voltage). Percentage Up–Modulation is then determined by the rel.