Power Amp/Driver. NTE195A Datasheet

NTE195A Amp/Driver. Datasheet pdf. Equivalent

Part NTE195A
Description Silicon NPN Transistor RF Power Amp/Driver
Feature NTE195A Silicon NPN Transistor RF Power Amp/Driver, CB Description: The NTE195A is designed primaril.
Manufacture NTE
Datasheet
Download NTE195A Datasheet




NTE195A
NTE195A
Silicon NPN Transistor
RF Power Amp/Driver, CB
Description:
The NTE195A is designed primarily for use in large–signal output amplifier stages. Intended for use
in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a
high percentage of up–modulation in AM circuits.
Features:
D Specified 12.5V, 28MHz Characteristic:
Power Output = 3.5W
Power Gain = 10dB
Efficiency
= 70% Typical
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V
Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
V(BR)CES IC = 200mA, VBE = 0
V(BR)EB IE = 1mA, IC = 0
O
ICBO VCB = 15V, IE = 0
DC Current Gain
Dynamic Characteristics
hFE VCE = 2V, IC = 400mA
Capacitance
Cob VCB = 12.5V, IE = 0, f = 1MHz
Min Typ Max Unit
70 – – V
4––V
– – 0.01 mA
30 – – –
– 35 70 pF



NTE195A
Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Functional Test
Common Emitter Amplifier Power Gain
Collector Efficiency
GPE POUT = 3.5W, VCC = 12.5V, f = 27MHz 10 – –
η POUT = 3.5W, VCC = 12.5V, f = 27MHz, 62.5 70.0
Note 1
dB
%
Percent UpModulation
f = 27MHz, Note 2
85 %
Parallel Equivalent Input Resistance
Parallel Equivalent Input Capacitance
Parallel Equivalent Output Capaciatnce
Rin POUT = 3.5W, VCC = 12.5V, f = 27MHz
Cin POUT = 3.5W, VCC = 12.5V, f = 27MHz
Cout POUT = 3.5W, VCC = 12.5V, f = 27MHz
21
900
200
pF
pF
Note 1. η = RF POUT  100
(VCC) (IC)
Note 2. Percentage UpModulation is measured by setting the Carrier Power (PC) to 3.5 Watts with
VCC = 12.5Vdc and noting the power input. The peak envelope power (PEP) is noted after
doubling the original power input to simulate driver modulation (at a 25% duty cycle for ther-
mal considerations) and raising the VCC to 25Vdc (to simulate the modulating voltage). Per-
centage UpModulation is then determined by the relation:
Percentage UpModulation = (PEP) 1/21  100
PC
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter
.018 (0.45)
Base
Collector/Case
45°
.031 (.793)







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