Gain Amplifier. NTE199 Datasheet

NTE199 Amplifier. Datasheet pdf. Equivalent

Part NTE199
Description Silicon NPN Transistor Low Noise / High Gain Amplifier
Feature NTE199 Silicon NPN Transistor Low Noise, High Gain Amplifier Description: The NTE199 is a silicon NP.
Manufacture NTE
Datasheet
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NTE199
NTE199
Silicon NPN Transistor
Low Noise, High Gain Amplifier
Description:
The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu-
ration voltage, tight beta control, and excellent low noise characteristics.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Steady State Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C
Total Power Dissipation (TA = +55°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case, 10sec max), TL . . . . . . . . . . . . . . . . . +260°C
Note 1. Determined from power limitations due to saturation voltages at this current
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ICBO
ICES
IEBO
VCB = 50V
VCB = 50V, TA = +100°C
VCB = 50V
VEB = 5V
Min Typ Max Unit
– – 30 nA
– – 10 µA
– – 30 nA
– – 50 nA



NTE199
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics (Cont’d)
Forward Current Transfer Ratio
Breakdown Voltage
CollectortoEmitter
hFE VCE = 5V, IC = 2mA
VCE = 5V, IC = 100µA, Note 2
V(BR)CEO IC = 10mA, Note 3
400
300
50
800
V
Breakdown Voltage
CollectortoBase
V(BR)CBO IC = 10µA
70 – – V
Breakdown Voltage
EmittertoBase
V(BR)EBO IE = 10µA
5– –V
Collector Saturation Voltage
Base Saturation Voltage
Base Emitter ON Voltage
Dynamic Characteristics
VCE(sat)
VBE(sat)
VBE(on)
IC = 10mA, IB = 1mA, Note 3
IC = 10mA, IB = 1mA, Note 3
VCE = 10V, IC = 2mA
– – 0.125 V
– – 0.78 V
0.5 0.9 V
Forward Current Transfer Ratio
Output Capacitance,
Common Base
hfe VCE = 5V, IC = 2mA, f = 1kHz 400 1200
Ccb VCB = 10V, IE = 0, f = 1kHz
– – 4 pF
Noise Figure
NF IC = 100µA, VCE = 5V,
Rg = 5k, f = 1kHz
– – 3 dB
Note 2. Typically, a minimum of 95% of the distribution is above this value.
Note 3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
ECB
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max







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