Power Output. NTE20 Datasheet

NTE20 Output. Datasheet pdf. Equivalent

Part NTE20
Description Silicon Complementary Transistors High Power / Low Collector Saturation Voltage Power Output
Feature NTE20 (NPN) & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Vol.
Manufacture NTE
Datasheet
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NTE20
NTE20 (NPN) & NTE21 (PNP)
Silicon Complementary Transistors
High Power, Low Collector Saturation Voltage
Power Output
Features:
D High Power in a Compact ATR Package: PO = 1W
Applications:
D Regulated Power Supplies
D 1 to 2W Output Stages
D Drivers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Pulse
NTE20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
NTE21 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +135°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO IC = 1mA
V(BR)CBO IC = 50µA
V(BR)EBO IE = 50µA
ICBO VCB = 20V
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Transition Frequency
IEBO
hFE
VCE(sat)
fT
VEB = 4V
VCE = 3V, IC = 500mA
IC = 2A, IC = 200mA
VCE = 5V, IC = 500mA
Output Capacitance
Cob VCB = 10V, f = 1MHz
Min Typ Max Unit
32 – – V
40 – – V
5––V
– – 1 µA
– – 1 µA
120 – 270
– 500 – mV
– 100 – MHz
– 50 – pF



NTE20
.102 (2.6)
.280 (7.11)
E C B .185 (4.7)
.100 (2.54)
.051 (1.29)
.138 (3.5)
.022 (0.55)







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