Darlington Array/Driver. NTE2012 Datasheet

NTE2012 Array/Driver. Datasheet pdf. Equivalent

Part NTE2012
Description Integrated Circuit 7-Channel Darlington Array/Driver
Feature NTE2011/NTE2012/NTE2013/NTE2014/NTE2015 Integrated Circuit 7–Channel Darlington Array/Driver Descrip.
Manufacture NTE
Datasheet
Download NTE2012 Datasheet




NTE2012
NTE2011/NTE2012/NTE2013/NTE2014/NTE2015
Integrated Circuit
7–Channel Darlington Array/Driver
Description:
The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP
type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub-
strate. All units have open–collector outputs and integral diodes for inductive load transient suppres-
sion.
Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are
permissible, making them ideal for driving tungstun filament lamps.
The NTE2011 is a general purpose array that may be used with standard bi–polar digital logic using
external current limiting, or with most PMOS or CMOS directly. This device is pinned with outputs
opposite inputs to facilitate printed wiring board layouts.
The NTE2012 is designed for use with 14V to 25V PMOS devices. Each input has a Zener diode and
resistor in series to limit the input current to a safe value in that application. The Zener diode also gives
this device excellent noise immunity.
The NTE2013 has a 2.7kseries base resistor for each Darlington pair, allowing operation directly
with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface
needs – particularly those beyond the capabilities of standard logic buffers.
The NTE2014 has a 10.5kseries input resistor that permits operation directly from CMOS or PMOS
outputs utilizing supply voltages of 6V to 15V. The required input current is below that of the NTE2013,
while the required input voltage is less than that required by the NTE2012.
The NTE2015 is designed for use with standard TTL and Schottky TTL, with which higher output cur-
rents are required and loading of the logic output is not a concern. This device will sink a minimum
of 350mA when driven from a “totem pole” logic output.
Absolute Maximum Ratings: (TA = +25°C for any one Darlington pair unless otherwise specified)
Output Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Input Voltage, VIN
NTE2012, NTE2013, NTE2014 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
NTE2015 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Continuous Collector Current. IC
NTE2011, NTE2013, NTE2014 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
NTE2012, NTE2015 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Continuous Input Current, IIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Power Dissipation, PD
One Darlington Pair . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Total Device (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. The NTE2015 is a discontinued device and no longer available.
Note 2. Derate at the rate of 16.6mW/°C above +25°C.
Note 3. Under normal operating conditions, these devices will sustain 350mA per output with
VCE(sat) = 1.6V at +70°C with a pulse width of 20ms and a duty cycle of 34%.



NTE2012
Electrical Characteristics: (TA = +25° unless otherwise specified)
Parameter
Symbol Device
Test Conditions
Output Leakage Current
CollectorEmitter
Saturation Voltage
ICEX
VCE(sat)
All VCE = 50V, TA = +25°C
VCE = 50V, TA = +70°C
NTE2012 VCE = 50V, TA = +70°C, VIN = 6V
NTE2014 VCE = 50V, TA = +70°C, VIN = 1V
NTE2011 IC = 100mA, IB = 250µA
NTE2013
NTE2014
IC = 200mA, IB = 350µA
IC = 350mA, IB = 500µA
NTE2012 IC = 200mA, IB = 350µA
NTE2015 IC = 350mA, IB = 500µA
IC = 500mA, IB = 600µA
Input Current
IIN(ON)
NTE2012 VIN = 17V
NTE2013 VIN = 3.85V
NTE2014 VIN = 5V
VIN = 12V
Input Voltage
IIN(OFF)
VIN(ON)
NTE2015 VIN = 3V
All IC = 500µA, TA = +70°C
NTE2012 VCE = 2V, IC = 500mA
NTE2013 VCE = 2V, IC = 200mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
NTE2014 VCE = 2V, IC = 125mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 275mA
VCE = 2V, IC = 350mA
NTE2015 VCE = 2V, IC = 350mA
DC Forward Current
Transfer Ratio
hFE NTE2011 VCE = 2V, IC = 350mA
Input Capacitance
CIN All
TurnOn Delay
tPLH All 0.5 Ein to 0.5 Eout
TurnOff Delay
Clamp Diode Leakage
Current
tPHL All 0.5 Ein to 0.5 Eout
IR All VR = 50V, TA = +25°C
VR = 50V, TA = +70°C
Clamp Diode Forward Voltage
VF
All IF = 350mA
Min Typ
––
––
––
––
0.9
1.1
1.3
1.1
1.3
1.7
0.82
0.93
0.35
1.0
1.5
50 60
––
––
––
––
––
––
––
––
––
1000
15
0.25
0.25
––
––
1.7
Max Unit
50 µA
100 µA
500 µA
500 µA
1.1 V
1.3 V
1.6 V
1.3 V
1.6 V
1.9 V
1.25 mA
1.35 mA
0.50 mA
1.45 mA
2.4 mA
µA
17 V
2.4 V
2.7 V
3.0 V
5.0 V
6.0 V
7.0 V
8.0 V
2.6 V
25 pF
1.0 µs
1.0 µs
50 µA
100 µA
2.0 V







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