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NTE2015 Dataheets PDF



Part Number NTE2015
Manufacturers NTE
Logo NTE
Description Integrated Circuit 7-Channel Darlington Array/Driver
Datasheet NTE2015 DatasheetNTE2015 Datasheet (PDF)

NTE2011/NTE2012/NTE2013/NTE2014/NTE2015 Integrated Circuit 7–Channel Darlington Array/Driver Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic substrate. All units have open–collector outputs and integral diodes for inductive load transient suppression. Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are permiss.

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NTE2011/NTE2012/NTE2013/NTE2014/NTE2015 Integrated Circuit 7–Channel Darlington Array/Driver Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic substrate. All units have open–collector outputs and integral diodes for inductive load transient suppression. Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are permissible, making them ideal for driving tungstun filament lamps. The NTE2011 is a general purpose array that may be used with standard bi–polar digital logic using external current limiting, or with most PMOS or CMOS directly. This device is pinned with outputs opposite inputs to facilitate printed wiring board layouts. The NTE2012 is designed for use with 14V to 25V PMOS devices. Each input has a Zener diode and resistor in series to limit the input current to a safe value in that application. The Zener diode also gives this device excellent noise immunity. The NTE2013 has a 2.7kΩ series base resistor for each Darlington pair, allowing operation directly with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface needs – particularly those beyond the capabilities of standard logic buffers. The NTE2014 has a 10.5kΩ series input resistor that permits operation directly from CMOS or PMOS outputs utilizing supply voltages of 6V to 15V. The required input current is below that of the NTE2013, while the required input voltage is less than that required by the NTE2012. The NTE2015 is designed for use with standard TTL and Schottky TTL, with which higher output currents are required and loading of the logic output is not a concern. This device will sink a minimum of 350mA when driven from a “totem pole” logic output. Absolute Maximum Ratings: (TA = +25°C for any one Darlington pair unless otherwise specified) Output Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Input Voltage, VIN NTE2012, NTE2013, NTE2014 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V NTE2015 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Continuous Collector Current. IC NTE2011, NTE2013, NTE2014 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA NTE2012, NTE2015 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Continuous Input Current, IIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Power Dissipation, PD One Darlington Pair . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Total Device (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20° to +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. The NTE2015 is a discontinued device and no longer available. Note 2. Derate at the rate of 16.6mW/°C above +25°C. Note 3. Under normal operating conditions, these devices will sustain 350mA per output with VCE(sat) = 1.6V at +70°C with a pulse width of 20ms and a duty cycle of 34%. Electrical Characteristics: (TA = +25° unless otherwise specified) Parameter Output Leakage Current Symbol ICEX Device All Test Conditions VCE = 50V, TA = +25°C VCE = 50V, TA = +70°C NTE2012 VCE = 50V, TA = +70°C, VIN = 6V NTE2014 VCE = 50V, TA = +70°C, VIN = 1V Collector–Emitter Saturation Voltage VCE(sat) NTE2011 IC = 100mA, IB = 250µA NTE2013 I = 200mA, IB = 350µA NTE2014 C IC = 350mA, IB = 500µA NTE2012 IC = 200mA, IB = 350µA NTE2015 IC = 350mA, IB = 500µA IC = 500mA, IB = 600µA Input Current IIN(ON) NTE2012 VIN = 17V NTE2013 VIN = 3.85V NTE2014 VIN = 5V VIN = 12V NTE2015 VIN = 3V IIN(OFF) Input Voltage VIN(ON) All IC = 500µA, TA = +70°C NTE2012 VCE = 2V, IC = 500mA NTE2013 VCE = 2V, IC = 200mA VCE = 2V, IC = 250mA VCE = 2V, IC = 300mA NTE2014 VCE = 2V, IC = 125mA VCE = 2V, IC = 200mA VCE = 2V, IC = 275mA VCE = 2V, IC = 350mA NTE2015 VCE = 2V, IC = 350mA DC Forward Current Transfer Ratio Input Capacitance Turn–On Delay Turn–Off Delay Clamp Diode Leakage Current Clamp Diode Forward Voltage hFE CIN tPLH tPHL IR VF NTE2011 VCE = 2V, IC = 350mA All All All All All 0.5 Ein to 0.5 Eout 0.5 Ein to 0.5 Eout VR = 50V, TA = +25°C VR = 50V, TA = +70°C IF = 350mA Min – – – – – – – – – – – – – – – 50 – – – – – – – – – 1000 – – – – – – Typ – – – – 0.9 1.1 1.3 1.1 1.3 1.7 0.82 0.93 0.35 1.0 1.5 60 – – – – –.


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