Display Driver. NTE2023 Datasheet

NTE2023 Driver. Datasheet pdf. Equivalent

Part NTE2023
Description Integrated Circuit General Purpose / High Current 7-Segment Display Driver
Feature NTE2023 Integrated Circuit General Purpose, High Current 7–Segment Display Driver Description: The N.
Manufacture NTE
Datasheet
Download NTE2023 Datasheet




NTE2023
NTE2023
Integrated Circuit
General Purpose, High Current
7–Segment Display Driver
Description:
The NTE2023 is a general purpose high current transistor array in a 16–Lead DIP type package com-
prised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected
in a common–collector configuration.
Absolute Maximum Ratings:
Power Dissipation (Any One Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C
Individual Transistor Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Substrate Voltage, VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Note 1. The collector of each transistor in the NTE2023 is isolated from the substrate by an integral
diode. The substrate must be connected to a voltage which is more negative than any collec-
tor voltage so as to maintain isolation between transistors, and to provide normal transistor
action. Undesired coupling between transistors is avoided by maintaining the substrate (5)
at either DC or signal (AC) ground. An appropriate bypass capacitor can be used to establish
a signal ground.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage
Collector–Substrate Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
V(BR)CES
V(BR)CIE
V(BR)CEO
V(BR)EBO
IC = 500µA
ICI = 500µA
IC = 1mA
IC = 500µA
Forward Current Transfer Ratio
hFE VCE = 0.5V, IC = 30mA
VCE = 0.8V, IC = 50mA
Min Typ Max Unit
20 80 – V
20 80 – V
16 40 – V
57–V
30 80 –
40 85 –



NTE2023
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
BaseEmitter Saturation Voltage
CollectorEmitter Saturation Voltage
Collector Cutoff Current
VBE(sat)
VCE(sat)
ICEO
ICBO
IC = 30mA
IC = 30mA
IC = 50mA
VCE = 10V
VCB = 10V
0.75 1 V
0.13 0.5 V
0.2 0.7 V
– – 10 µA
– – 1 µA
Pin Connection Diagram
Q1 Emitter 1
Q2 Emitter 2
Q2 Base 3
Q5 Emitter 4
Substrate 5
Q5 Base 6
Q6 Emitter 7
Q6 Base 8
16 VDD
15 Common Cathode
14 Q3 Emitter
13 Q3 Base
12 Q4 Emitter
11 Q4 Base
10 Q7 Base
9 Q7 Emitter
16 9
18
.870 (22.0)
Max
.200 (5.08)
Max
.260
(6.6)
Max
.100 (2.54)
.700 (17.78)
.099 (2.5) Min







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