Static RAM. NTE2102 Datasheet

NTE2102 RAM. Datasheet pdf. Equivalent

Part NTE2102
Description Integrated Circuit NMOS / 1K Static RAM
Feature NTE2102 Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns Description: The NTE2101 is a high–spee.
Manufacture NTE
Datasheet
Download NTE2102 Datasheet




NTE2102
NTE2102
Integrated Circuit
NMOS, 1K Static RAM (SRAM), 350ns
Description:
The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead
DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage
cells eliminate the need for clock or refresh circuitry.
Low threshold silicon gate N–Channel technology allows complete DTL/TTL compatibility of all inputs
and outputs as well as a single 5V supply. The separate chip enable input (CE) controlling the output
allows easy memory expansion by OR–tying individual devices to a data bus. Data in and data out
have the same polarity.
Features:
D Single 5V Supply
D All Inputs and Outputs Directly DTL/TTL Compatible
D Static Operation – No Clocks or Refresh
D All Inputs Protected Against Static Charge
D 350ns Access Time
Absolute Maximum Ratings: (Note 1)
Voltage at Any Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5V to +7V
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Note 1. “Absolute Maximum Ratings” are those values beyond which the device may be permanently
damaged. They do not mean the device may be operated at these values.
Recommended Operating Conditions:
Parameter
Symbol
Supply Voltage
Operating Ambient Temperature
Input Low Voltage
Input High Voltage
VCC
TA
VIL
VIH
Test Conditions
Min Typ Max Unit
4.75 – 5.25 V
0 – +70 °C
–0.5 – 0.8 V
2.0 – VCC V



NTE2102
DC Electrical Characteristics: (TA = 0° to +70°C, VCC = 5V ±5% unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Load Current
ILI VIN = 0 to 5.25V
– – 10 µA
Output Leakage Current, High ILOH CE = 2V, VOUT = 2.4V
– – 5 µA
Output Leakage Current, Low ILOL CE = 2V, VOUT = 0.4V
– – –10 µA
Power Supply Current
ICC All Inputs = 5.25V, Data Output Open,
TA = +25°C
– – 45 mA
Power Supply Amp
ICC All Inputs = 5.25V, Data Output Open,
TA = 0°C
– – 50 mA
Output Low Voltage
VOL IOL = 3.2mA
– – 0.4 V
Output High Voltage
VOH IOH = 200µA
2.4 – – V
AC Electrical Characteristics (With Standard Load): (TA = 0° to +70°C, VCC = 5V ±5% unless
otherwise specified)
Parameter
Symbol Test Conditions Min Typ Max Unit
Read Cycle
Read Cycle
Access Time
Chip Enable to Output Time
tRC
350
ns
tA – – 350 ns
tCO – – 150 ns
Previous Read Data Valid with Respect to Address
Previous Read Data Valid with Respect to Chip Enable
Write Cycle
tOH1
tOH2
40
0
ns
ns
Write Cycle
tWC
350
ns
Address to Write SetUp
tAW
20
ns
Write Pulse Width
Write Recovery Time
Data SetUp Time
tWP
150
ns
tWR 0 – – ns
tDW
125
ns
Data Hold Time
tDH 0 – – ns
Chip Enable to Write SetUp
tCW
150
ns
AC Electrical Characteristis: (TA = +25°C, f = 1MHz unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Capacitance
Input Capacitance
Output Capacitance
CIN
COUT
All Inputs VIN = 0V
VO = 0V
3 5 pF
4 6 pF
Standby Characteristics: (TA = 0° to +70°C, Note 2 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
VCC in Standby
CE Bias in Standby
VPD
VCES
2 VPD VCCmax
1.5 VPD 2
1.5 – – V
2.0 – – V
VPD – – V
Note 2. Typical values at TA = +25°C.







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