PNP Transistor. NTE218 Datasheet

NTE218 Transistor. Datasheet pdf. Equivalent

Part NTE218
Description Silicon PNP Transistor
Feature NTE218 Silicon PNP Transistor Audio Power Output Description: The NTE218 is ideal for use as a drive.
Manufacture NTE
Datasheet
Download NTE218 Datasheet




NTE218
NTE218
Silicon PNP Transistor
Audio Power Output
Description:
The NTE218 is ideal for use as a driver, switch and medium–power amplifier applications. This device
features:
Features:
D Low Saturation Voltage – 0.6VCE(sat) @ IC = 1A
D High Gain Characteristics – hFE @ IC = 250mA: 30–100
D Excellent Safe Area Limits
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.143W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1 Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
Electrical Characteristics: (TC = +25°C unless otherwise sepcified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Colector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1
80 – – V
Emitter Cutoff Current
Collector Cutoff Current
IEBO
ICEX
ICEO
ICBO
VEB = 7V
VCE = 80V, VBE(off) = 1.5V
VCE = 60V, VBE(off) = 1.5V, TC = +150°C
VCE = 60V, IB = 0
VCB = 80V, IE = 0
1
– 0.5 mA
– 100 µA
– 1.0 mA
– 1.0 mA
– 100 µA



NTE218
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise sepcified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Voltage
Transient Characteristics
hFE
VCE(sat)
VBE
VCE = 1V, IC = 100mA
VCE = 1V, IC = 250mA
VCE = 1V, IC = 500mA
VCE = 1V, IC = 1A
IC = 1A, IB = 125mA
VCE = 1V, IC = 250mA
40
30 100
20
10
– – 0.6 V
– – 1.0 V
Current Gain Bandwidth Product
Common Base Output Capacitance
SmallSignal Current Gain
fT VCE = 1V, IC = 250mA, f = 1MHz
Cob VCE = 10V, IC = 0, f = 100kHz
hfe VCE = 10V, IC = 50mA, f = 1kHz
3 – – MHz
– – 100 pF
25
Note 1 Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
.485 (12.3)
Dia
.295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.145 (3.7) R Max
.360
(9.14)
Min
Base
.200
(5.08)
Collector/Case
Emitter







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