NPN Transistor. NTE23 Datasheet

NTE23 Transistor. Datasheet pdf. Equivalent

Part NTE23
Description Silicon NPN Transistor
Feature NTE23 Silicon NPN Transistor Ultra High Frequency Amp Description: The NTE23 is suitable for a low n.
Manufacture NTE
Datasheet
Download NTE23 Datasheet




NTE23
NTE23
Silicon NPN Transistor
Ultra High Frequency Amp
Description:
The NTE23 is suitable for a low noise amplifier in the VHF to UHF band.
Features:
D Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz
D High Power Gain: Gpe 15dB Typ. @ f = 500MHz
D High Cutoff Frequency: fT = 2.0GHz Typ
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Junction Temperatur, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Maximum Available Power Gain
Noise Figure
ICBO
IEBO
hFE
fT
Cob
Gpe
NF
VCB = 15V, IE = 0
VEB = 2V, IC = 0
VCE = 10V, IC = 10mA
VCE = 10V, IC = 10mA
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 10mA, f = 500MHz
VCE = 10V, IC = 3mA, f = 500MHz
Min Typ Max Unit
– – 0.1 µA
– – 0.1 µA
25 80 200 –
1.5 2.0 – GHz
– 0.75 1.1 pF
13 15 – dB
– 3.0 4.0 dB



NTE23
.210
(5.33)
Max
.500
(12.7)
Min
.135 (3.45) Min
Seating Plane
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
BEC
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max







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