NPN Transistor. NTE2300 Datasheet

NTE2300 Transistor. Datasheet pdf. Equivalent

Part NTE2300
Description Silicon NPN Transistor
Feature NTE2300 Silicon NPN Transistor High Voltage, Horizontal Output Description: The NTE2300 is a silicon.
Manufacture NTE
Datasheet
Download NTE2300 Datasheet




NTE2300
NTE2300
Silicon NPN Transistor
High Voltage, Horizontal Output
Description:
The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen
color TV deflection circuits.
Features:
D High Breakdown Voltage and High Reliability
D High Switching Speed
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Collector Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Charactertistics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current–Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Fall Time
ICBO VCB = 800V, IE = 0
IEBO VEB = 5V, IC = 0
hFE VCE = 5V, IC = 1A
fT VCE = 10V, IC = 1A
VCE(sat) IC = 4A, IB = 0.8A
VBE(sat) IC = 4A, IB = 0.8A
V(BR)CBO IC = 5mA, IE = 0
V(BR)CEO IC = 100mA, RBE =
V(BR)EBO IE = 200mA, IC = 0
tf IC = 4A, IB1 = 0.8A, IB2 = –1.6A
Min Typ Max Unit
– – 10 µA
– – 1 mA
8––
– 3 – MHz
– – 5.0 V
– – 1.5 V
1500 – – V
800 – – V
7––V
– – 0.4 µs



NTE2300
.190 (4.82)
.787
(20.0)
.615 (15.62)
C
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B CE
.215 (5.47)







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