NPN Transistor. NTE2301 Datasheet

NTE2301 Transistor. Datasheet pdf. Equivalent

Part NTE2301
Description Silicon NPN Transistor
Feature NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon .
Manufacture NTE
Datasheet
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NTE2301
NTE2301
Silicon NPN Transistor
High Voltage Horizontal Output
Description:
The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large
screen deflection circuits.
Features:
D Collector–Emitter Voltage: VCEX = 1500V
D Glassivated Base–Collector Junction
D Safe Operating Area @ 50µs = 20A, 400V
D Switching Times with Inductive Loads: tf = 0.4µs (Typ) @ IC = 4.5A
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
Total Power Dissipation, PD
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Maximum Lead Temperature (During Soldering, 1/8” from Case for 5sec), TL . . . . . . . . . . . +275°C



NTE2301
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Note 1)
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
VCEO(sus) IC = 50mA, IB = 0
ICES VCE = 1500V, VBE = 0
IEBO VBE = 5V, IC = 0
750
––
––
V
1 mA
1 mA
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Dynamic Characteristics
VCE(sat)
VBE(sat)
IC = 4.5A, IB = 1.8A
IC = 3.5A, IB = 1.5A
IC = 4.5A, IB = 1.8A
IC = 3.5A, IB = 1.5A
––5V
––5V
– – 1.5 V
– – 1.5 V
Current Gain Bandwidth Product
Output Capacitance
Switching Characteristics
fT IC = 100mA, VCE = 5V, ftest = 1MHz 4 MHz
Cob VCB = 10V, IE = 0, f = 0.1MHz
125 pF
Fall Time
tf IC = 4.5A, IB1 = 1.8A, LB = 8µH
IC = 4.5A, IB1 = 1.8A, LB = 8µH,
TC = +100°C
0.4 1.0 µs
0.6 µs
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle = 2%.
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners







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