NPN Transistor. NTE2303 Datasheet

NTE2303 Transistor. Datasheet pdf. Equivalent

Part NTE2303
Description Silicon NPN Transistor
Feature NTE2303 Silicon NPN Transistor Horizontal Deflection Description: The NTE2303 is a silicon NPN trans.
Manufacture NTE
Datasheet
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NTE2303
NTE2303
Silicon NPN Transistor
Horizontal Deflection
Description:
The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen
black and white deflection circuits.
Features:
D Collector–Emitter Voltage: VCEX = 1500V
D Glassivated Base–Collector Junction
D Switching Times with Inductive Loads: tf = 0.65µs (Typ) @ IC = 2A
Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A
Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics (Note 1)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
VCEO(sus) IC = 50mA, IB = 0
ICES VCE = 1500V, VBE = 0
IEBO VEB = 5V, IC = 0
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat) IC = 2A, IB = 660mA
VBE(sat) IC = 2A, IB = 660mA
Note 1 Pulse Test: Pulse Width 300µs, Duty Cycle = 2%.
Min Typ Max Unit
750 –
––
––
–V
1.0 mA
0.1 mA
– – 5.0 V
– – 1.5 V



NTE2303
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
Output Capacitance
Cob VCB = 10V, IE = 0, f = 0.1MHz
50 pF
Current GainBandwidth Product
fT VCE = 5V, Ic = 100mA, ftest = 1MHz, Note 1 4.0 MHz
Switching Characteristics
Fall Time
tf IC = 2A, IB1 = 600mA, LB = 12µH
0.65 µs
Note 1 Pulse Test: Pulse Width 300µs, Duty Cycle = 2%.
.147 (3.75)
Dia Max
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab







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