Complementary Transistors. NTE2305 Datasheet

NTE2305 Transistors. Datasheet pdf. Equivalent

Part NTE2305
Description Silicon Complementary Transistors
Feature NTE2305 (NPN) & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Descrip.
Manufacture NTE
Datasheet
Download NTE2305 Datasheet




NTE2305
NTE2305 (NPN) & NTE2306 (PNP)
Silicon Complementary Transistors
High Voltage Power Amplifier
Description:
The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type
package designed for use in high power audio amplifier applications and high voltage switching regu-
lator circuits.
Features:
D High Collector–Emitter Sustaining Voltage: VCEO(sus) = 160V
D High DC Current Gain: hFE = 35 Typ @ IC = 8A
D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Note 1. Pulse Test: Pulse Width 5ms, Duty Cycle 10%.
Electrical Charactertistics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 2
160 – – V
Collector–Emitter Cutoff Current
ICEX VCE = 160V, VEB(off) = 1.5V
– – 0.1 mA
VCE = 160V, VEB9off) = 1.5V, TC = +150°C –
– 5.0 mA
ICEO VCE = 80V, IB = 0
– – 750 µA
Emitter–Base Cutoff Current
IEBO VBE = 7V, IC = 0
– – 1.0 mA
Collector–Base Cutoff Current
ICBO VCB = 160V, IE = 0
– – 750 µA
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.



NTE2305
Electrical Charactertistics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VBE(on)
VCE = 2V, IC = 8A
VCE = 4V, IC = 16A
IC = 8A, IB = 0.8A
IC = 16A, IB = 2A
IC = 16A, IB = 2A
VCE = 4V, IC = 16A
15 35
8 15
– – 2.0 V
– – 3.5 V
– – 3.9 V
– – 3.9 V
CurrentGain Bandwidth Product
fT VCE = 20V, IC = 1A, f = 0.5MHz,
Note 3
1.0
MHz
Output Capacitance
Cob VCB = 10V, IE = 0, f = 0.1MHz
– – 800 pF
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 3. fT = |hFE| S ftest.
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)