NPN Transistor. NTE2309 Datasheet

NTE2309 Transistor. Datasheet pdf. Equivalent

Part NTE2309
Description Silicon NPN Transistor
Feature NTE2309 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage .
Manufacture NTE
Datasheet
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NTE2309
NTE2309
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pules test: Pulse Width 300µs, Duty Cycle 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
VCB = 400V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 0.4A
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
fT
VCE(sat)
VBE(sat)
VCE = 5V, IC = 2A
VCE = 10V, IC = 0.4A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A
Output Capacitance
Cob VCB = 10V, f = 1MHz
Min Typ Max Unit
– – 10 µA
– – 10 µA
10 –
8––
– 15 – MHz
– – 2.0 V
– – 1.5 V
– 120 – pF



NTE2309
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorBase Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
900 – – V
CollectorEmitter Breakdown Voltage V(BR)CBO IC = 5mA, RBE =
800 – – V
EmitterBase Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
7––V
CollectorEmitter Sustaining Voltage VCEO(sus) IC = 6A, IB = 2A, L = 200µH
800 – – V
VCEX(sus) IC = 2A, IB1 = 0.4A, L= 1mH,
IB2 = 0.4A, Clamped
800 – – V
IC = 1A, IB1 = 0.2A, L= 2mH,
IB2 = 0.2A, Clamped
900 – – V
TurnOn Time
Storage Time
ton VCC = 400V, IC = 4A, IB1 = 0.8A, – – 1.0 µs
tstg IB2 = 1.6A, RL = 100
– – 3.0 µs
Fall Time
tf
– – 0.7 µs
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
C
.126
(3.22)
Dia
.787
(20.0)
B CE
.215 (5.47)







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