NPN Transistor. NTE2310 Datasheet

NTE2310 Transistor. Datasheet pdf. Equivalent

Part NTE2310
Description Silicon NPN Transistor
Feature NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon.
Manufacture NTE
Datasheet
Download NTE2310 Datasheet




NTE2310
NTE2310
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for
use in high voltage, fast switching industrial applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak (tp 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (tp 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2°C/W
Electrical Charactertistics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
VCEO(sus)
ICES
IC = 100mA, L = 25mH, Note 1
VCE = 1000V, VBE = 0
VCE = 1000V, VBE = 0, TC = +125°C
400
–V
1 mA
3 mA
Emitter Cutoff Current
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Turn–On Time
Storage Time
Fall Time
IEBO
VCE(sat)
VBE(sat)
ton
ts
tf
VEB = 9V, IC = 0
IC = 6A, IB = 1.2A, Note 1
IC = 6A, IB = 1.2A, Note 1
IC = 6A, IB1 = 1.2A, IB2 = 1.2A
– – 10 mA
– – 1.5 V
– – 1.5 V
– – 1 µs
– – 4 µs
– – 0.8 µs
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.



NTE2310
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156 (3.96)
Dia.
BC E
.550
(13.97)
.430
(10.92)
.055 (1.4)
.500
(12.7)
Min
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners







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