NPN Transistor. NTE2311 Datasheet

NTE2311 Transistor. Datasheet pdf. Equivalent

Part NTE2311
Description Silicon NPN Transistor
Feature NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon.
Manufacture NTE
Datasheet
Download NTE2311 Datasheet



NTE2311
NTE2311
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high
speed switching applications.
Features:
D High Blocking Capability: VCEX = 1000V
D Wide Surge Area: ICSM = 55A @ 350V
Applications:
D Switchmode Power Supply
D DC/DC and DC/AC Converters
D Motor Control
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Voltage (VBE = –2.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current (tp 5ms), IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current (tp 5ms), IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Power Dissipation, Ptot
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
TC = +60°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
VCEO(sus)
V(BR)EBO
ICEX
ICER
IB = 0, IC = 200mA, L = 25mH
IC = 0, IE = 50mA
TJ = +25°C VCE = VCEX,
TJ = +125°C VBE = –2.5V
TJ = +25°C VCE = VCEX,
TJ = +125°C RBE = 10
Min Typ Max Unit
450 – – V
7 – 30 V
– – 0.2 mA
– – 2.0 mA
– – 0.5 mA
– – 4.0 mA



NTE2311
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Cont,d)
Emitter Cutoff Current
ON Characteristics (Note 1)
IEBO IC = 0, VBE = 5V
– – 1 mA
DC Current Gain
hFE IC = 8Adc, VCE = 5Vdc)
CollectorEmitter Saturation Voltage VCE(sat) IC = 8A, IB = 1.6A
IC = 12A, IB = 2.4A
BaseEmitter Saturation Voltage
VBE(sat) IC = 8A, IB = 1.6A
Switching Characteristics (Switching Times on Resistive Load)
10 – – –
– – 1.5 V
– – 5.0 V
– – 1.6 V
TurnOn Time
Storage Time
ton VCC = 150V, IC = 8A,
ts IB1 = IB2 = 1.6A
Fall Time
tf
Switching Characteristics (Switching Times on Inductive Load)
0.55 1.0 µs
1.5 3.0 µs
0.3 0.8 µs
Storage Time
Fall Time
ts TJ = +25°C VCC = 300V,
TJ = +125°C
VBB = 5V,
LB = 3µH,
tf TJ = +25°C IC = 8A,
TJ = +125°C IBend = 1.6A
Note 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
3.5 µs
– – 5.0 µs
0.08 µs
– – 0.4 µs
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners







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