PNP Transistor. NTE2314 Datasheet

NTE2314 Transistor. Datasheet pdf. Equivalent

Part NTE2314
Description Silicon PNP Transistor
Feature NTE2314 Silicon PNP Transistor High Current, High Speed Switch (Compl to NTE2304) Description: The N.
Manufacture NTE
Datasheet
Download NTE2314 Datasheet




NTE2314
NTE2314
Silicon PNP Transistor
High Current, High Speed Switch
(Compl to NTE2304)
Description:
The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay
drivers, high–speed inverters, converters, and other general high–current switching applications.
Features:
D Low Collector–Emitter Saturation Voltage
D Wide ASO and Resistant to Breakdowns
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Allowable Collector Dissipation (TC = +25°C ), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Turn–On Time
Storage Time
Fall Time
ICBO VCB = 40V, IE = 0
IEBO VEB = 4V, IC = 0
hFE VCE = 2V, IC = 1A
VCE = 2V, IC = 8A
fT VCE = 5V, IC = 1A
VCE(sat) IC = 8A, IB = 0.4A
V(BR)CBO IC = 1mA, IE = 0
V(BR)CBO IC = 1mA, RBE =
V(BR)EBO IE = 1mA, IC = 0
ton 10IB1 = –10IB2 = IC = 2A,
tstg PW = 20µs
tf
Min Typ Max Unit
– – 0.1 mA
– – 0.1 mA
100 – 200
30 –
– 20 – MHz
– 0.26 0.5 V
60 – – V
50 – – V
6––V
– 0.2 – µs
– 0.5 – µs
– 0.1 – µs



NTE2314
.190 (4.82)
.787
(20.0)
.615 (15.62)
C
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B CE
.215 (5.47)







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)