NPN Transistor. NTE2319 Datasheet

NTE2319 Transistor. Datasheet pdf. Equivalent

Part NTE2319
Description Silicon NPN Transistor
Feature NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a s.
Manufacture NTE
Datasheet
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NTE2319
NTE2319
Silicon NPN Transistor
High Voltage, High Speed Power Switch
Description:
The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated
switchmode applications.
Features:
D Fast Turn–On Times @ TC = +100°C:
Inductive Fall Time: 50ns Typ
Inductive Crossover Time: 90ns Typ
Inductive Storage Time: 800ns Typ
D 100°C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Current
Applications:
D Switching Regulators
D Inverters
D Solenoids
D Relay Drivers
D Motor Controls
D Deflection Circuits
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Device Dissipation, PD
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse Test: Pulse Width 5µs, Duty Cycle 10%.



NTE2319
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
VCEO(sus)
ICEV
ICER
IEBO
Table 2, IC = 100mA, IB = 0
VCEV = 850V,
VBE(off) = 1.5V
TC = +25°C
TC = +100°C
VCE = 850V, RBE = 50, TC = +100°C
VEB = 6V, IC = 0
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
DC Current Gain
Dynamic Characteristics
VCE(sat)
VBE(sat)
hFE
IC = 5A, IB = 700mA
IC = 10A, IB = 1.3A
IC = 10A, IB = 1.3A
IC = 15A, VCE = 5V
TC = +25°C
TC = +100°C
TC = +25°C
TC = +100°C
Output Capacitance
Switching Characteristics
Cob VCB = 10V, IE = 0, ftest = 1kHz
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Inductive Load (Table 2)
td IC = 10A,
tr
VCC = 250V,
IB1 = 1.3A,
ts PW = 30νs,
tf Duty Cycle 2%
ts
tf
IB2 = 2.6A,
RB = 1.6
VBE(off) = 5V
Storage Time
Fall Time
Crossover Time
Storage Time
Fall Time
Crossover Time
tsv IC = 10A,
tfi
IB1 = 1.3A,
VBE(off) = 5V,
tc VCE(pk) = 400V
tsv
tfi
tc
TC = +100°C
TC = +150°C
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle 2%.
Min Typ Max Unit
450 – – V
– – 0.25 mA
– – 1.5 mA
– – 2.5 mA
– – 1.0 mA
– – 2.5 V
– – 3.0 V
– – 3.0 V
– – 1.5 V
– – 1.5 V
5––
– – 400 pF
20
200
1200
200
650
80
ns
ns
ns
ns
ns
ns
800 1800 ns
50 200 ns
90 250 ns
1050 ns
70 ns
120 ns







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