NPN Transistor. NTE2321 Datasheet

NTE2321 Transistor. Datasheet pdf. Equivalent

Part NTE2321
Description Silicon NPN Transistor
Feature NTE2321 Silicon NPN Transistor Quad, General Purpose Absolute Maximum Ratings: Collector–Emitter Vol.
Manufacture NTE
Datasheet
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NTE2321
NTE2321
Silicon NPN Transistor
Quad, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C, Each Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2mW/°C
Total Device Dissipation (TA = +25°C, Total Device), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.2mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
IC = 10mA, IB = 0, Note 1
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 50V, IE = 0
VEB = 3V, IE = 0
40 – – V
60 – – V
5–– V
– – 50 nA
– – 50 nA
DC Current Gain
Collector–Emitter Saturation Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VCE = 10V, IC = 10mA
VCE = 10V, IC = 150mA
VCE = 10V, IC = 300mA
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
75 – –
100 – –
30 – –
– – 0.4 V
– – 1.6 V
Current Gain–Bandwidth Product
fT VCE = 20V, IC = 20mA, f = 100MHz, 200 350 – MHz
Note 1
Output Capacitance
Input Capacitance
Cobo
Cibo
VBE = 19V, IE = 0, f = 1MHz
VBE = 0.5V, IC = 0, f = 1MHz
– 4.5 8.0 pF
– 17 30 pF
Note 1. Pulse test: Pulse Width 300µs, Duty Cycle 2%.



NTE2321
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Switching Characteristics
TurnOn Time
TurnOff Time
ton VCC = 30V, VBE(off) = 0.5V,
IC = 150mA, IB1 = 15mA
toff VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
25 ns
250 ns
Pin Connection Diagram
Collector 1
Base 2
Emitter 3
N.C. 4
Emitter 5
Base 6
Collector 7
14 Collector
13 Base
12 Emitter
11 N.C.
10 Emitter
9 Base
8 Collector
14 8
17
.785 (19.95) Max
.300 (7.62)
.200 (5.08)
Max
.100 (2.45)
.600 (15.24)
.099 (2.5) Min







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