PNP Transistor. NTE2322 Datasheet

NTE2322 Transistor. Datasheet pdf. Equivalent

Part NTE2322
Description Silicon PNP Transistor
Feature NTE2322 Silicon PNP Transistor Quad, General Purpose Absolute Maximum Ratings: Collector–Emitter Vol.
Manufacture NTE
Datasheet
Download NTE2322 Datasheet




NTE2322
NTE2322
Silicon PNP Transistor
Quad, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = +25°C, Each Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/°C
Total Device Dissipation (TA = +25°C, Total Device), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Thermal Reistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
IC = 10mA, IB = 0, Note 1
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 30V, IE = 0
VEB = 3V, IE = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
VCE = 10V, IC = 10mA
VCE = 10V, IC = 150mA
VCE = 10V, IC = 300mA
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
Note 1. Pulse test: Pulse Width 300µs, Duty Cycle 2%.
Min Typ Max Unit
40 – – V
60 – – V
5–– V
– – 50 nA
– – 50 nA
75 – –
100 – –
30 – –
– – 0.4 V
– – 1.6 V
– – 1.5 V
– – 2.6 V



NTE2322
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Small–Signal Characteristics
Current GainBandwidth Product
Output Capacitance
fT
Cobo
VCE = 20V, IC = 50mA, f = 100MHz 200
VCB = 10V, IE = 0, f = 1MHz
MHz
8 pF
Input Capacitance
Cibo VEB = 2V, IC = 0, f = 1MHz
– – 30 pF
Pin Connection Diagram
Collector 1
Base 2
Emitter 3
N.C. 4
Emitter 5
Base 6
Collector 7
14 Collector
13 Base
12 Emitter
11 N.C.
10 Emitter
9 Base
8 Collector
14 8
17
.785 (19.95) Max
.300 (7.62)
.200 (5.08)
Max
.100 (2.45)
.600 (15.24)
.099 (2.5) Min







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)