NPN Transistor. NTE2324 Datasheet

NTE2324 Transistor. Datasheet pdf. Equivalent

Part NTE2324
Description Silicon NPN Transistor
Feature NTE2324 Silicon NPN Transistor Color TV Horizontal Deflection Output Applications: D Color TV Horizo.
Manufacture NTE
Datasheet
Download NTE2324 Datasheet



NTE2324
NTE2324
Silicon NPN Transistor
Color TV Horizontal Deflection Output
Applications:
D Color TV Horizontal Deflection Output
Features:
D High Speed (tf = 100nsec)
D High Breakdown Voltage (VCBO = 1500V)
D High Reliability (adoption of HVP process)
Absolute Maximum Ratings:
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICES VCE = 1500V
– – 1.0 mA
ICBO VCB = 800V
– – 10 µA
Collector Sustain Voltage
VCEO(sus) IC = 100mA, IB = 0
800 – – V
Emitter Cutoff Current
IEBO VEB = 4V
– – 1.0 mA
Collector–Emitter Saturation Voltage VCE(sat) IC = 6A, IB = 1.2A
– – 5.0 V
Base–Emitter Saturation Voltage
VBE(sat) IC = 6A, IB = 1.2A
– – 1.5 V
DC Current Gain
hFE VCE = 5V, IC = 1A
8––
VCE = 5V, IC = 6A
5 – 10
Fall Time
tf IC = 6A, IB1 = 1.2A, IB2 = 2.4A – 0.1 0.3 µs



NTE2324
.123 (3.1)
.221 (5.6)
.134 (3.4) Dia
.630 (16.0)
.315
(8.0)
.866
(22.0)
BCE
.158 (4.0)
.804
(20.4)
.215 (5.45)
.040 (1.0)







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