NPN Transistor. NTE2325 Datasheet

NTE2325 Transistor. Datasheet pdf. Equivalent

Part NTE2325
Description Silicon NPN Transistor
Feature NTE2325 Silicon NPN Transistor High Voltage Switch Features: D High Reverse Voltage: VCBO = 900V (Ma.
Manufacture NTE
Datasheet
Download NTE2325 Datasheet




NTE2325
NTE2325
Silicon NPN Transistor
High Voltage Switch
Features:
D High Reverse Voltage: VCBO = 900V (Max)
D High Speed Switching: tf = 0.7µs (Max)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak Collector Current (Note 1), icp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 10%
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCEO(sus)
VCEX(sus)1
IC = 1mA, IE = 0
IC = 5mA, RBE =
IE = 1mA, IC = 0
VCB = 800V, IE = 0
VEB = 5V, IC = 0
IC = 3A, L = 500µH, IB = 1A
IC = 1A, IB1 = 200mA, IB2 = –200mA,
L = 2mH, Clamped
900 –
800 –
7–
––
––
800 –
800 –
–V
–V
–V
10 µA
10 µA
–V
–V
VCEX(sus)2 IC = 500mA, IB1 = 100mA, IB2 = –100mA, 900 – – V
L = 5mH, Clamped



NTE2325
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Dynamic Characteristics
hFE1
hFE2
VCE(sat)
VBE(sat)
VCE = 5V, IC = 200mA
VCE = 5V, IC = 1A
IC = 1.5A, IB = 300mA
IC = 1.5A, IB = 300mA
10 – –
8––
– – 2.0 V
– – 1.5 V
Current GainBandwidth Product
Output Capactiance
Switching Characteristics
fT VCE = 10V, IC = 200mA
Cob VCB = 10V, f = 1MHz
15 MHz
60 pF
TurnOn Time
Storage Time
Fall Time
ton IC = 2A, IB1 = 400mA, IB2 = 800mA,
tstg RL = 200, VCC = 400V
tf
1.0 µs
3.0 µs
0.7 µs
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab







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