NPN Transistor. NTE233 Datasheet

NTE233 Transistor. Datasheet pdf. Equivalent

Part NTE233
Description Silicon NPN Transistor
Feature NTE233 Silicon NPN Transistor Video IF, Oscillator Absolute Maximum Ratings: Collector–Emitter Volta.
Manufacture NTE
Datasheet
Download NTE233 Datasheet




NTE233
NTE233
Silicon NPN Transistor
Video IF, Oscillator
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), TL . . . . . . . . . . . . . . . +230°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0
30 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0
3–– V
Collector Cutoff Current
ICBO VCB = 30V, IE = 0
– – 50 nA
ICEO VCE = 30V, IB = 0
– – 1 µA
DC Pulse Current Gain
hFE IC = 10mA, VCE = 10V, Note 1 20 – 100
Collector Saturation Voltage
VCE(sat) IC = 20mA, IB = 0.1mA, Note 1 – 0.6 –
V
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 1mA, IB = 0, Note 1
30 – – V
Current Gain–Bandwidth Product
fT IC = 10mA, VCE = 10V,
f = 100MHz
300 – 700 MHz
Power Gain, Fixed Neutralization
Gpe IC = 10mA, VCE = 10V,
f = 45MHz
25 – – dB
Reverse Transfer Capacitance
Output Admittance, Input Short
Circuit
Cre IE = 0, VCB = 10V, f 1MHz
goe IC = 10mA, VCE = 10V,
f = 45MHz
0.6 – 1.1 pF
30 – 200 µmho
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1%.



NTE233
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
EBC
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max







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