NPN Transistor. NTE2331 Datasheet

NTE2331 Transistor. Datasheet pdf. Equivalent

Part NTE2331
Description Silicon NPN Transistor
Feature NTE2331 Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode Applications: D .
Manufacture NTE
Datasheet
Download NTE2331 Datasheet



NTE2331
NTE2331
Silicon NPN Transistor
Color TV Horizontal Deflection Output
w/Damper Diode
Applications:
D Color TV Horizontal Deflection Output
D Color Display Horizontal Deflection Output
Features:
D High Speed (tf = 100nsec)
D High Breakdown Voltage (VCBO = 1500V)
D High Reliability
D On–Chip Damper Diode
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Saturation Voltage
Collector to Emitter
ICES VCE = 1500V
ICBO VCB = 800V
VCEO(sus) IC = 100mA, IB = 0
IEBO VEB = 4V
VCE(sat) IC = 5A, IB = 1.0A
– – 1.0 mA
– – 10 µA
800 – – V
40 – 130 mA
––5V
Saturation Voltage
Base to Emitter
VBE(sat) IC = 5A, IB = 1.0A
– – 1.5 V



NTE2331
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
DC Current Gain
Diode Forward Voltage
Fall Time
hFE1
hFE2
VF
tf
VCE = 5V, IC = 1A
VCE = 5V, IC = 5A
IEC = 6A
IC = 4A, IB1 = 0.8A, IB2 = 1.6A
8
5
0.1
Max
10
2
0.3
Unit
V
µs
.123 (3.1)
.221 (5.6)
.134 (3.4) Dia
.630 (16.0)
.315
(8.0)
.866
(22.0)
BCE
.158 (4.0)
.804
(20.4)
.215 (5.45)
.040 (1.0)







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