NPN Transistor. NTE2332 Datasheet

NTE2332 Transistor. Datasheet pdf. Equivalent

Part NTE2332
Description Darlington Silicon NPN Transistor
Feature NTE2332 Darlington Silicon NPN Transistor w/ Internal Damper & Zener Diode Description: The NTE2332 .
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Datasheet
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NTE2332
NTE2332
Darlington Silicon NPN Transistor
w/ Internal Damper & Zener Diode
Description:
The NTE2332 Darlington transistor is especially well suited for use in switching of L load motor driv-
ers, printer hammer drivers, relay drivers, etc.
Features:
D High DC Current Gain
D Large Current Capacity and Wide ASO
D Contains 60 ±10V Avalanche Diode Between Collector and Base
D Uniformity in Collector–to–Base Breakdown Voltage Due to Adoption of Accurate Impurity
Diffusion Process
D 25mJ Reverse Energy Rating
Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Collector to Base Voltage, VCBO, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Collector to Emitter Voltage, VCEO, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Collector Current, icp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
ICEO
IEBO
VCB = 40V, IE = 0
VEB = 5V, IC = 0
Min Typ Max Unit
– – 10 µA
– – 2 mA



NTE2332
Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Current Gain
Gain Bandwidth Product
CollectorEmitter Saturation
Voltage
hFE
fT
VCE(sat)
VCE = 5V, IC = 1A
VCE = 5V, IC = 1A
IC = 1A, IB = 4mA
1000 4000
180 MHZ
1.0 1.5 V
BaseEmitter Saturation
Voltage
VBE(sat) IC = 1A, IB = 4mA
– – 2.0 V
CollectorBase Breakdown V(BR)CBO IC = 0.1mA, IE = 0
Voltage
50 60 70 V
CollectorEmitter Breakdown V(BR)CEO IC = 1mA, RBE =
Voltage
50 60 70 V
Unclamped Inductive Load
Energy
Es/b L = 100mH, RBE = 100
25
mJ
TurnOn Time
Storage Time
Fall Time
ton VCC = 20V, IC = 1A
tstg IB1 = IB2 = 4mA
tf IB1 = IB2 = 4mA
0.2
3.5
0.5
µs
µs
µs
.420 (10.67)
Max
.110 (2.79)
C
B
.147 (3.75)
Dia Max
.500
(12.7)
Max
E
.070 (1.78) Max
.250
(6.35)
Max
.500
(12.7)
Min
Base
.100 (2.54)
Emitter
Collector/Tab







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