Power Transistor. NTE2333 Datasheet

NTE2333 Transistor. Datasheet pdf. Equivalent

Part NTE2333
Description Silicon NPN Power Transistor
Feature NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a .
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NTE2333
NTE2333
Silicon NPN Power Transistor
for Switching Power Applications
Description:
The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–
operated Switchmode Power supplies and electronic light ballasts.
Features:
D Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain hFE
Fast Switching
No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Absolute Maximum Ratings:
Collector–Emitter Sustaining Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Breakdown Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Maximum Lead Temperature (During Soldering, 1/8” from Case for 5sec), TL . . . . . . . . . . . +260°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.
Note 2. Proper strike and creepage distance must be provided.



NTE2333
Electrical Characteristics: (TC = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
VCEO(sus
)
ICEO
ICES
IEBO
IC = 100mA, L = 25mH
VCE = 450V, IB = 0
VCE = 1000V, VEB = 0
VCE = 1000V, VEB = 0, TC = +125°C
VCE = 800V, VEB = 0, TC = +125°C
VEB = 9V, IC = 0
450 – – V
– – 100 µA
– – 100 µA
– – 500 µA
– – 100 µA
– – 100 µA
BaseEmitter Saturation Voltage
CollectorEmitter Saturation Voltage
VBE(sat)
VCE(sat)
IC = 1.3A, IB = 0.13A
IC = 3A, IB = 0.6A
IC = 1.3A, IB = 0.13A
IC = 3A, IB = 0.6A
DC Current Gain
hFE IC = 0.5A, VCE = 5V
IC = 3A, VCE = 1V
Dynamic Characteristics
IC = 1.3A, VCE = 1V
IC = 10mA, VCE = 5V
0.83 1.2
0.94 1.3
0.25 0.6
TC = +125°C 0.27 0.65
0.35 0.7
TC = +125°C
14
0.4 0.8
34
TC = +125°C 32
6 10
TC = +125°C
TC = +25°C
to +125°C
5
11
10
8
17
22
V
V
V
V
V
V
V
Current Gain Bandwidth Product
fT IC = 0.5A, VCE = 10V, f = 1MHz
14 MHz
Output Capacitance
Cob VCB = 10V, IB = 0, f = 1MHz
75 120 pF
Input Capacitance
Cib VEB = 8V
1000 1500 pF
Dynamic Saturation Voltage:
VCE(dsat)
IC = 1.3A,
1µs
5.5
Determined 1µs and 3µs respectively
after rising IB1 reaches 90% of final
IB1 = 130mA,
VCC = 300V
TC = +125°C 12.0
IB1 3µs 3.0
V
V
V
TC = +125°C 7.0 V
IC = 3.0A,
1µs
9.5
IB1 = 600mA,
VCC = 300V
TC = +125°C 14.5
3µs 2.0
V
V
V
TC = +125°C 7.5
Switching Characteristics: Resistive Load (DC 10%, Pulse Width = 20µs)
V
TurnOn Time
TurnOff Time
TurnOn Time
TurnOff Time
ton IC = 3A, IB1 = 600mA,
90 180 ns
IB2 = 1.5A, VCC = 300V TC = +125°C 100
ns
toff 1.7 2.5 µs
TC = +125°C 2.1 µs
ton IC = 1.3A, IB1 = 130mA,
200 300 ns
IB2 = 650mA,
VCC = 300V
TC = +125°C 130 ns
toff 1.2 2.5 µs
TC = +125°C 1.5 µs







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