NPN Transistor. NTE2335 Datasheet

NTE2335 Transistor. Datasheet pdf. Equivalent

Part NTE2335
Description Silicon NPN Transistor
Feature NTE2335 Silicon NPN Transistor Darlington w/Internal Zener Diode for Line Operated TV Features: D Ex.
Manufacture NTE
Datasheet
Download NTE2335 Datasheet



NTE2335
NTE2335
Silicon NPN Transistor
Darlington w/Internal Zener Diode for Line Operated TV
Features:
D Excellent Wide Safe Operating Area
D Included Avalanche Diode
D High DC Current Gain
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±15V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±15V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Allowable Energy
V(BR)CBO IC = 10mA, IE = 0
V(BR)CBO IC = 100mA, IB = 0
IEBO VEB = 6V, IC = 0
hFE VCE = 5V, IC = 500mA
VCE(sat) IC = 500mA, IB = 1mA
IC = 1A, IB = 1mA
VBE VCE = 5V, IC = 500mA
ET
Min Typ Max Unit
45 60 75
V
45 60 75
V
– – 100 µA
2000
20000
– – 1.5 V
– – 2.5 V
– – 1.8 V
80 –
– W.sec



NTE2335
.190 (4.82)
.787
(20.0)
Schematic Diagram
C
B
E
.615 (15.62)
C
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B CE
.215 (5.47)







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