NPN Transistor. NTE2336 Datasheet

NTE2336 Transistor. Datasheet pdf. Equivalent

Part NTE2336
Description Silicon NPN Transistor
Feature NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zen.
Manufacture NTE
Datasheet
Download NTE2336 Datasheet




NTE2336
NTE2336
Silicon NPN Transistor
Darlington Switch w/Internal Damper
& Zener Diode
Features:
D 60V Zener Diode Built–In Between Collector and Base
D Low Fluctuation in Breakdown Voltages
D High Energy Handling Capability
D High Speed Switching
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Collector Power Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Voltage
ICBO
IEBO
VCEO
VCB = 50V, IE = 0
VEB = 7V, IC = 0
IC = 5mA, IB = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
VCE = 3V, IC = 4A
VCE = 3V, IC = 8A
IC = 4A, IB = 8mA
IC = 4A, IB = 8mA
Transition Frequency
fT VCE = 10V, IC = 500mA, f = 1MHz
Min Typ Max Unit
– – 100 µA
– – 2 mA
50 – 70 V
2000 – 5000
500 –
– – 1.5 V
– – 2.0 V
– 20 – MHz



NTE2336
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
TurnOn Time
Storage Time
Fall Time
Energy Handling Capacity
ton VCC = 50V, IC = 4A,
tstg IB1 = 8mA, IB2 = 8mA
0.5
4
µs
µs
tf 1 µs
Es/b IC = 1A, L = 100mH, RBE = 10050
mJ
C
B
E
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated







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