NPN Transistor. NTE2339 Datasheet

NTE2339 Transistor. Datasheet pdf. Equivalent

Part NTE2339
Description Silicon NPN Transistor
Feature NTE2339 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, H.
Manufacture NTE
Datasheet
Download NTE2339 Datasheet




NTE2339
NTE2339
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide Safe Operating Area
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width 300µs, Duty Cycle 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
ICBO
IEBO
hFE (1)
hFE (2)
fT
Cob
VCE(sat)
VBE(sat)
VCB = 800V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 200mA
VCE = 5V, IC = 1A
VCE = 10V, IC 200mA
VCB = 10V, f = 1MHz
IC = 1.5A, IB = 300mA
IC = 1.5A, IB = 300mA
Min Typ Max Unit
– – 10 µA
– – 10 µA
20 – 40
8––
– 15 – MHz
– 60 – pF
– – 2.0 V
– – 1.5 V



NTE2339
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorBase Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
1100 – – V
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE =
800 – – V
EmitterBase Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0
7––V
CollectorEmitter Sustaining Voltage VCEX(sus) IC = 1.5A, IB1 = IB2 = 300mA, 800 – – V
L = 2mH, Clamped
TurnOn Time
Storage Time
Fall Time
ton
tstg
VCC = 400V, IB1 = 2.5A,
IB2 =IC = 2A, RL = 200
tf
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated







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