Complementary Transistors. NTE2345 Datasheet

NTE2345 Transistors. Datasheet pdf. Equivalent

Part NTE2345
Description Silicon Complementary Transistors
Feature NTE2345 (NPN) & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Am.
Manufacture NTE
Datasheet
Download NTE2345 Datasheet




NTE2345
NTE2345 (NPN) & NTE2346 (PNP)
Silicon Complementary Transistors
General Purpose Darlington, Power Amplifier
Description:
The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an
SOT–82 type package designed for use in audio output stages and general amplifier and switching
applications..
Features:
D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V
D Junction Temperature to +150°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak (tp 10ms, δ ≤ 0.1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08K/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
ICBO
ICEO
IE = 0, VCBO = 120V
IE = 0, VCBO = 120V, TJ = +150°C
IB = 0, VCEO = 60V
Emitter Cutoff Current
IEBO IC = 0, VEBO = 5V
DC Current Gain
hFE IC = 500mA, VCEO = 3V, Note 1
IC = 3A, VCEO = 3V, Note 1
IC = 6A, VCEO = 3V, Note 1
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Min Typ Max Unit
– – 0.2 mA
– – 2mA mA
– – 0.5 mA
– – 5 mA
– 2700 –
750 –
– 400 –



NTE2345
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
BaseEmitter Voltage
CollectorEmitter Saturation Voltage
SmallSignal Current Gain
CutOff Frequency
Diode, Forward Voltage
Second Breakdown Collector Current
NonRepetitive, without Heatsink
VBE
VCE(sat)
hfe
fhfe
VF
I(SB)
IC = 3A, VCEO = 3V, Note 2
IC = 3A, IB = 12mA
IC = 3A, VCEO = 3V, f = 1MHz
IC = 3A, VCEO = 3V
IF = 3A
VCEO = 60V, tp = 25ms
2.5
2.0
10
100
1.8
1
V
V
kHz
V
A
TurnOn Time
TurnOff Time
ton IC(on) = 3A, IB(on) = IB(off) = 12mA
toff IC(on) = 3A, IB(on) = IB(off) = 12mA
1 2 µs
5 10 µs
Note 2. VBE decreases by about 3.8mV/K with increasing temperature.
Schematic Diagram
CC
BB
NPN
E
.307 (7.8)
Max
.100 (2.54)
.118 (3.0)
Min
.147
(3.75)
.437
(11.1)
Max
BC E
.100 (2.54)
.602
(15.3)
Min
PNP
E
See Note
.090 (2.29)
.047 (1.2)
Note: Collector connected to metal part of mounting surface.







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