NPN Transistor. NTE2347 Datasheet

NTE2347 Transistor. Datasheet pdf. Equivalent

Part NTE2347
Description Silicon NPN Transistor
Feature NTE2347 Silicon NPN Transistor General Purpose, Medium Power Description: The NTE2347 is a silicon N.
Manufacture NTE
Datasheet
Download NTE2347 Datasheet




NTE2347
NTE2347
Silicon NPN Transistor
General Purpose, Medium Power
Description:
The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current,
fast switching applications and for power amplifiers.
Absolute Maximum Ratings:
Collector–Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation, Ptot
TA +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W
TC +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector–Base Capacitance
Turn–On Time
Storage Time
Fall Time
ICES VCE = 150V, VBE = 0
VCE = 100V, VBE = 0
VCE = 100V, VBE = 0, TC = +150°C
IEBO VEB = 6V, IC = 0
VCEO(sus) IC = 50mA, IB = 0, Note 1
VCE(sat) IC = 5A, IB = 500mA, Note 1
VBE(sat) IC = 5A, IB = 500mA, Note 1
hFE IC = 2A, VCE = 2V, Note 1
IC = 2A, VCE = 2V, TC = –55°C, Note 1
fT IC = 500mA, VCE = 5V
CCBO VCB = 10V, IE = 0, f = 1MHz
ton VCC = 20V, IC = 500mA, IB1 = 500mA
ts VCC = 20V, IC = 5A, IB1 = –IB2 = 500mA
tf
80
40
15
50
– 1 mA
– 1 µA
– 100 µA
– 1 mA
––V
–1V
– 1.6 V
– 120
––
– – MHz
– 80 pF
– 0.35 µs
– 0.35 µs
– 0.3 µs
Note 1. Pulse Test: Pulse Duration = 300µs, Duty Cycle = 1.5%.



NTE2347
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter
.018 (0.45)
Base
Collector/Case
45°
.031 (.793)







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