NPN Transistor. NTE2353 Datasheet

NTE2353 Transistor. Datasheet pdf. Equivalent

Part NTE2353
Description Silicon NPN Transistor
Feature NTE2353 Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode Features: D High Speed.
Manufacture NTE
Datasheet
Download NTE2353 Datasheet




NTE2353
NTE2353
Silicon NPN Transistor
TV Horizontal Deflection Output
w/Damper Diode
Features:
D High Speed: tf = 100nsec
D High Breakdown Voltage: VCBO = 1500V
D On–Chip Damper Diode
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICES VCE = 1500V
– – 1.0 mA
ICBO VCB = 800V
– – 10 µA
Collector Sustain Voltage
VCEO(sus) IC = 100mA, IB = 0
800 – – V
Emitter Cutoff Current
IEBO VEB = 4V
40 – 130 mA
Collector Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 1.6A
––5V
Base Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 1.6A
– – 1.5 V
DC Current Gain
hFE1 VCE = 5V, IC = 1A
8––
hFE2 VCE = 5V, IC = 8A
5 – 10
Diode Forward Voltage
VF IEC = 10A
– – 2.0 V
FallTime
tf IC = 6A, IB1 = 1.2A, IB2 = 2.4A – 0.1 0.3 µs



NTE2353
.123 (3.1)
.221 (5.6)
.134 (3.4) Dia
.630 (16.0)
.315
(8.0)
.866
(22.0)
BCE
.158 (4.0)
.804
(20.4)
.215 (5.45)
.040 (1.0)







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