NPN Transistor. NTE236 Datasheet

NTE236 Transistor. Datasheet pdf. Equivalent

Part NTE236
Description Silicon NPN Transistor
Feature NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB) Description: The NTE236 i.
Manufacture NTE
Datasheet
Download NTE236 Datasheet




NTE236
NTE236
Silicon NPN Transistor
Final RF Power Output
(PO = 16W, 27MHz, SSB)
Description:
The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF
band mobile radio applications.
Features:
D High Power Gain: Gpe 12dB (VCC = 12V, PO = 16W, f = 27MHz)
D Ability to Withstand Infinite VSWR Load when Operated at:
VCC = 16V, PO = 20W, f = 27MHz
Application:
D 10 to 14 Watt Output Power Class AB Amplifier Applications in HF band
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage (RBE = ), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Collector Dissipation, PC
TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7W
TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73.5°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25°C/W



NTE236
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
EmitterBase Breakdown Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
V(BR)EBO IE = 5mA, IC = 0
V(BR)CBO IC = 1mA, IE = 0
V(BR)CEO IC = 10mA, RBE =
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Gain
Output Power
Collector Efficiency
ICBO
IEBO
hFE
PO
hC
VCB = 30V, IE = 0
VEB = 4V, IC = 0
VCE = 12V, IC = 10mA, Note 1
VCC = 12V, Pin = 1W, f = 27MHz
VCC = 12V, Pin = 1W, f = 27MHz
Note 1. Pulse Test: Pulse Width = 150µs, Duty Cycle = 5%.
Min Typ Max Unit
5––V
60 – – V
25 – – V
– – 100 µA
– – 100 µA
10 50 180
16 18 W
60 70 %
.358 (9.1)
.126 (3.2) C
.051 (1.3)
.142 (3.62) Dia
.485
(12.32)
.485
(12.32)
Min
BCE
.395
(9.05)
.189
(4.8)
.100 (2.54)
.177 (4.5)
.019 (0.48)
.347 (9.5)
.122 (3.1)







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