Complementary Transistors. NTE2361 Datasheet

NTE2361 Transistors. Datasheet pdf. Equivalent

Part NTE2361
Description Silicon Complementary Transistors
Feature NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The N.
Manufacture NTE
Datasheet
Download NTE2361 Datasheet



NTE2361
NTE2361 (NPN) & NTE2362 (PNP)
Silicon Complementary Transistors
High Speed Switch
Description:
The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for gener-
al–purpose amplifier and high speed switching applications. The high gain of these devices makes
it possible for them to be driven directly from integrated circuits.
Features:
D Very Small–Sized Package
D High Breakdown Voltage: VCEO = 50V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. For PNP device (NTE2362), voltage and current values are negative.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
ICBO
IEBO
hFE
fT
VCB = 40Vdc, IE = 0
VBE = 4Vdc
VCE = 5V, IC = 10mA
VCE = 10V,
IC = 50mA
NTE2361
NTE2362
Min Typ Max Unit
– – 0.1 µA
– – 0.1 µA
200 – 400
– 200 – MHz
– 300 – MHz



NTE2361
Electrical Characteristics (Cont’d): (TC = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
Cob VCB = 10Vdc,
f = 1MHz
NTE2361 5.6 pF
NTE2362 3.7 pF
CollectorEmitter Saturation Voltage
VCE(sat) IC = 100mA,
IB = 10mA
NTE2361 0.15 0.4
NTE2362 0.1 0.3
V
V
BaseEmitter Saturation Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
Rise Time
Storage Time
Fall Time
VBE(sat) IC = 100mA, IB = 10mA
0.8 1.2
V(BR)CBO IC = 10µA, IE = 0
60 – –
V(BR)CEO IC = 100µA, RBE =
50 – –
V(BR)EBO IE = 10µA, IC =
5––
ton VCC = 20V,
tstg
IC = 100mA,
IB1 = 10mA,
tf IB2 = 100mA
70
400
NTE2361 50
V
V
V
V
ns
ns
ns
NTE2362 70 ns
Note 1. For PNP device (NTE2362), voltage and current values are negative.
Note 2. Conditions apply to both except where noted.
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
ECB
.050 (1.27)
.050 (1.27)
.035 (0.9)
.102
(2.6)
Max







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