Complementary Transistors. NTE2363 Datasheet

NTE2363 Transistors. Datasheet pdf. Equivalent

Part NTE2363
Description Silicon Complementary Transistors
Feature NTE2363 (NPN) & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Swi.
Manufacture NTE
Datasheet
Download NTE2363 Datasheet




NTE2363
NTE2363 (NPN) & NTE2364 (PNP)
Silicon Complementary Transistors
High Current General Purpose Amp/Switch
Features:
D Low Saturation Voltage
D Large Current Capacity and Wide ASO
Applications:
D Power Supplies
D Relay Drivers
D Lamp Drivers
D Automotive Wiring
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Allowable Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1 For PNP device (NTE2364), voltage and current values are negative.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
ICBO
IEBO
hFE (1)
hFE (2)
fT
VCB = 50V, IE = 0
VEB = 4V, IC = 0
VCE = 2V, IC = 100mA
VCE = 2V, IC = 1.5A
VCE = 10V, IC = 50mA
Min Typ Max Unit
– – 0.1 µA
– – 0.1 µA
200 – 400
40 – –
– 150 – MHz



NTE2363
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2363
NTE2364
cob VCB = 10V, f = 1MHz
12 pF
22 pF
CollectorEmitter Saturation Voltage
NTE2363
NTE2364
VCE(sat) IC = 1A, IB = 50mA
0.15 0.4
0.3 0.7
V
V
BaseEmitter Saturation Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC = 1A, IB = 50mA
IC = 10µA, IE = 0
IC = 1mA, RBE =
IE = 10µA, IC = 0
0.9 1.2
60 – –
50 – –
6––
V
V
V
V
.343
(8.73)
Max
.492
(12.5)
Min
.024 (0.62) Max
.102 (2.6) Max
.018 (0.48)
ECB
.059 (1.5) Typ
.118 (3.0) Max
.236 (6.0)Dia Max
.197 (5.0)
.102 (2.6) Max







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