Complementary Transistors. NTE2367 Datasheet

NTE2367 Transistors. Datasheet pdf. Equivalent

Part NTE2367
Description Silicon Complementary Transistors
Feature NTE2367 (NPN) & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resis.
Manufacture NTE
Datasheet
Download NTE2367 Datasheet



NTE2367
NTE2367 (NPN) & NTE2368 (PNP)
Silicon Complementary Transistors
Digital w/2 Built–In 4.7k Bias Resistors
Features:
D Built–In Bias Resistor (R1 = 4.7k, R2 = 4.7k)
D Small–Sized Package (TO92 type)
Applications:
D Switching Circuit
D Inverter
D Interface Circuit
D Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation, PC
NTE2367 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
NTE2368 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +160°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
NTE2367
ICBO
ICEO
IEBO
hFE
fT
VCB = 40V, IE = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10mA
VCE = 10V, IC = 5mA
NTE2368
Output Capacitance
Cob VCB = 10V, f = 1MHz
Min Typ Max Unit
– – 0.1 µA
– – 0.5 µA
170 250 330 µA
30 –
– 250 – MHz
– 200 – MHz
– 3.0 – pF



NTE2367
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorEmitter Saturation Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
Input OFF Voltage
Input ON Voltage
Input Resistance
VCE(sat) IC = 5mA, IB = 0.25mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 100µA, RBE =
VI(off) VCE = 5V, IC = 100µA
VI(on) VCE = 200mV, IC = 5mA
R1
0.1 0.3 V
50 – – V
50 – – V
1.0 1.5 V
1.1 2.0 V
3.29 4.7 6.11 k
Input Resistance Ratio
R1/R2
0.9 1.0 1.1
Collector
(Output)
Schematic Diagram
Collector
(Output)
Base
(Input)
R1
R2
Base
(Input)
R1
R2
Emitter
(GND)
NPN
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
Emitter
(GND)
PNP
ECB
.050 (1.27)
.050 (1.27)
.035 (0.9)
.102
(2.6)
Max







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